MIP2E3DMY

(IPD) MIP2E3DMY MOS I 2.8±0.2 1.5±0.2 Unit : mm 10.5±0.5 9.5±0.2 8.0±0.2 6.7±0.3 4.5±0.2 1.4±0.1 I 15.4±0.3 φ 3.7±0.2 I Ta = 25°C ± 3°C 13.5±0.5 4.2±0.3 Solder Dip 1.4±0.1 (9.3) 2.5±0.2 0.6 +0.1 –0.2 0.8±0.1 VD VC ID IDP IC Tch Tstg 700 10 1.15 1.60 0.1 150 −55 ∼ +150 V V A A A °C °C 2.54±0.3 5.08±0.5 1 2 3 1 : Control 2 : Source 3 : Drain TO-220-A1 Package : MIP2E3DMY I Control 1 3 Drain S R Q Q MOSFET Max Duty Clock Sawtooth S V-I R Q Q 2 Source 2.8±0.2 : 2001 8 SLB00045AJD 1 MIP2E3DMY I TC = 25°C ± 2°C fOSC MAXDC PWM * * VC = VC(CNT) − 0.2 V VC = VC(CNT) − 0.2 V 90 66 100 69 11 40 110 72 kHz % dB mA/µs GPWM m VC < VC(ON) VC = VC(CNT) − 0.2 V IC(SB) IC(OP) VC(ON) VC(OFF) / ∆VC TSW / TTIM fTIM IC(CHG) VC(CNT) * 0.05 0.7 5.1 4.1 0.5 0.30 1.8 6.0 5.0 1.0 2 0.5 0.6 2.7 6.6 5.5 1.5 mA mA V V V % Hz VC = 0 V VC = 5 V −2.5 −2.0 5.7 −1.9 −1.2 6.2 10 −1.2 − 0.5 6.6 mA V mV V ∆VC(CNT) VD(MIN) ILIMIT 36 0.9 1.0 0.25 0.1 1.1 A µs µs °C * * * * ton(BLK) td(OCL) TOTP VC reset RDS(ON) IDSS VDSS tr tf * * 130 2.3 ID = 0.2 A VDS = 650 V, VC = 6.5 V ID = 0.25 mA, VC = 6.5 V 700 140 3.3 4.2 V Ω µA V µs µs °C/W °C/W 8.5 10 10.0 250 0.1 0.1 3.0 70 Rth(ch-c) Rth(ch-a) ) *: 2 SLB00045AJD (1) (2) (3) — ( ) — (4) ( ) (5) (6) ) (7) ( IPD (1) (2) Power Integrations ( ) IPD (3) (4) ( ) (1), (2) IPD (3) MIP501~MIP515, MIP704~MIP709 MIP805 IPD IPD ( ) IPD IPD MIP13* MIP14* MIP15* MIP16* MIP17* MIP18* MIP01* MIP02** MIP2*...