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Silicon MOSFET. MIP2E3DMY Datasheet

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Silicon MOSFET. MIP2E3DMY Datasheet
















MIP2E3DMY MOSFET. Datasheet pdf. Equivalent













Part

MIP2E3DMY

Description

Silicon MOSFET



Feature


(IPD) MIP2E3DMY MOS I 2.8±0.2 1.5±0.2 Unit : mm 10.5±0.5 9.5±0.2 8.0±0.2 6.7±0.3 • • 4.5±0.2 1.4±0.1 I 15.4±0.3 φ 3.7±0.2 I Ta = 25°C ± 3°C 13.5±0.5 4.2±0.3 Solder Dip 1.4±0.1 (9.3) 2.5±0.2 0.6 +0.1 –0 .2 0.8±0.1 VD VC ID IDP IC Tch Tstg 700 10 1.15 1.60 0.1 150 −55 ∼ +15 0 V V A A A °C °C 2.54±0.3 5.08±0 .5 1 2 3 1 : Control 2 : Source 3 : Drain TO-220-.
Manufacture

Panasonic

Datasheet
Download MIP2E3DMY Datasheet


Panasonic MIP2E3DMY

MIP2E3DMY; A1 Package : MIP2E3DMY I Control 1 3 Drain S R Q Q MOSFET Max Duty Clock Sawtooth S V-I R Q Q 2 Source 2.8 0.2 • : 2001 8 SLB00045AJD 1 M IP2E3DMY I TC = 25°C ± 2°C fOSC MAX DC PWM * * VC = VC(CNT) − 0.2 V VC = VC(CNT) − 0.2 V 90 66 100 69 11 40 110 72 kHz % dB mA/µs GPWM m VC < VC(ON) VC = VC(CNT) − 0.2 V IC(SB) I C(OP) VC(ON) VC(OFF) / ∆VC TSW .


Panasonic MIP2E3DMY

/ TTIM fTIM IC(CHG) VC(CNT) * 0.05 0.7 5.1 4.1 0.5 0.30 1.8 6.0 5.0 1.0 2 0.5 0.6 2.7 6.6 5.5 1.5 mA mA V V V % Hz VC = 0 V VC = 5 V −2.5 −2.0 5.7 −1.9 −1.2 6.2 10 −1.2 − 0.5 6 .6 mA V mV V ∆VC(CNT) VD(MIN) ILIM IT 36 0.9 1.0 0.25 0.1 1.1 A µs µ s °C * * * * ton(BLK) td(OCL) TOTP V C reset RDS(ON) IDSS VDSS tr tf * * 13 0 2.3 ID = 0.2 A VDS = 650 V, VC = .


Panasonic MIP2E3DMY

6.5 V ID = 0.25 mA, VC = 6.5 V 700 140 3.3 4.2 V Ω µA V µs µs °C/W °C/ W 8.5 10 10.0 250 0.1 0.1 3.0 70 Rt h(ch-c) Rth(ch-a) ) *: 2 SLB00045AJD (1) (2) (3) — ( ) — (4) ( ) ( 5) (6) ) (7) ( IPD (1) (2) Power Int egrations ( ) IPD (3) (4) ( ) (1), (2) IPD (3) MIP501~MIP515, MIP704~MIP709 MI P805 IPD IPD ( ) IPD IPD MIP13* MIP14* MIP15* MIP16* MIP17* MIP18* .





Part

MIP2E3DMY

Description

Silicon MOSFET



Feature


(IPD) MIP2E3DMY MOS I 2.8±0.2 1.5±0.2 Unit : mm 10.5±0.5 9.5±0.2 8.0±0.2 6.7±0.3 • • 4.5±0.2 1.4±0.1 I 15.4±0.3 φ 3.7±0.2 I Ta = 25°C ± 3°C 13.5±0.5 4.2±0.3 Solder Dip 1.4±0.1 (9.3) 2.5±0.2 0.6 +0.1 –0 .2 0.8±0.1 VD VC ID IDP IC Tch Tstg 700 10 1.15 1.60 0.1 150 −55 ∼ +15 0 V V A A A °C °C 2.54±0.3 5.08±0 .5 1 2 3 1 : Control 2 : Source 3 : Drain TO-220-.
Manufacture

Panasonic

Datasheet
Download MIP2E3DMY Datasheet




 MIP2E3DMY
MIP2E3DMY
MOS
(IPD)
I
I
I Ta = 25°C ± 3°C
VD 700
VC 10
ID 1.15
IDP 1.60
IC 0.1
Tch 150
Tstg 55 ∼ +150
V
V
A
A
A
°C
°C
I
Control 1
Max Duty
Clock
Sawtooth
SQ
RQ
SQ
V-I R Q
10.5±0.5
9.5±0.2
8.0±0.2
Unit : mm
4.5±0.2
1.4±0.1
φ 3.7±0.2
1.4±0.1
0.8±0.1
2.54±0.3
5.08±0.5
2.5±0.2
0.6+–00..21
123
1 : Control
2 : Source
3 : Drain
TO-220-A1 Package
: MIP2E3DMY
3
Drain
MOSFET
: 2001 8
SLB00045AJD
2
Source
1




 MIP2E3DMY
MIP2E3DMY
I TC = 25°C ± 2°C
PWM
/
) *:
*
*
fOSC
MAXDC
GPWM
m
VC = VC(CNT) 0.2 V
VC = VC(CNT) 0.2 V
IC(SB)
IC(OP)
VC(ON)
VC(OFF)
VC
TSW / TTIM
fTIM
IC(CHG)
VC(CNT)
* VC(CNT)
VD(MIN)
VC < VC(ON)
VC = VC(CNT) 0.2 V
VC = 0 V
VC = 5 V
*
*
*
*
ILIMIT
ton(BLK)
td(OCL)
TOTP
VC reset
RDS(ON)
ID = 0.2 A
IDSS VDS = 650 V, VC = 6.5 V
VDSS
ID = 0.25 mA, VC = 6.5 V
tr
tf
* Rth(ch-c)
* Rth(ch-a)
90 100 110 kHz
66 69 72
%
11 dB
40 mA/µs
0.05 0.30 0.6
0.7 1.8 2.7
5.1 6.0 6.6
4.1 5.0 5.5
0.5 1.0 1.5
2
0.5
2.5 1.9 1.2
2.0 1.2 0.5
5.7 6.2 6.6
10
36
mA
mA
V
V
V
%
Hz
mA
V
mV
V
0.9 1.0 1.1
0.25
0.1
130 140
2.3 3.3 4.2
A
µs
µs
°C
V
8.5 10.0
10 250 µA
700 V
0.1 µs
0.1 µs
3.0 °C/W
70 °C/W
2 SLB00045AJD




 MIP2E3DMY
(1)
(2)
(3)
(4)
(5)
(
—(
)
)
(6)
)
(7)
(
IPD
(1) Power Integrations ( )
(2) ( )
IPD
(3) IPD
IPD
(4) (1), (2)
(3)
()
IPD
MIP501~MIP515, MIP704~MIP709
IPD
MIP805
IPD
MIP13*
MIP14*
MIP15*
MIP16*
MIP17*
MIP18*
MIP01*
MIP02**
MIP2**
MIP30*
MIP2E*
(
50%
MIP10* MIP814~816
MIP11*
MIP803/MIP804/MIP806
( 50%
MIP501~515
MIP704~709
MIP805
()
G
105-8586
Power Integrations
1 30 (
)
)
IPD
()
() I
( ) EL IPD
/ IPD
EL IPD
DC/DC IPD
6 ) TEL (03) 3459-9270
()
A.
B.
C.
2001 MAR




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