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TRIAC. NTE56052 Datasheet

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TRIAC. NTE56052 Datasheet
















NTE56052 TRIAC. Datasheet pdf. Equivalent













Part

NTE56052

Description

TRIAC



Feature


NTE56051 & NTE56052 TRIAC, 8A Low Logic Level Description: The NTE56051 and NTE 56052 are glass passivated, Low Logic L evel TRIACs in a TO220 type package des igned for use in general purpose bidire ctional switching and phase control app lications. These devices are intended t o be interfaced directly to microcontro llers, logic integrated circuits, and o ther low power gat.
Manufacture

NTE Electronics

Datasheet
Download NTE56052 Datasheet


NTE Electronics NTE56052

NTE56052; e trigger circuits. Absolute Maximum Rat ings: Repetitive Peak Off–Sate Voltag e (Note 1), VDRM NTE56051 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V NTE56052 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..


NTE Electronics NTE56052

. . . 600V RMS On–State Current (Full Sine Wave, TMB ≤ 102°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Non–Repetitive Peak On State Current, ITSM (Full Sine Wave, TJ = +125°C prior to Surge, with Reapp lied VDRMmax) t = 20ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


NTE Electronics NTE56052

. . . . 55A t = 16.7ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60A I2 t for Fusing (t = 10ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A2sec Repetitive Rate–of–Rise of On–State Current after Triggering, dIT/dt.





Part

NTE56052

Description

TRIAC



Feature


NTE56051 & NTE56052 TRIAC, 8A Low Logic Level Description: The NTE56051 and NTE 56052 are glass passivated, Low Logic L evel TRIACs in a TO220 type package des igned for use in general purpose bidire ctional switching and phase control app lications. These devices are intended t o be interfaced directly to microcontro llers, logic integrated circuits, and o ther low power gat.
Manufacture

NTE Electronics

Datasheet
Download NTE56052 Datasheet




 NTE56052
NTE56051 & NTE56052
TRIAC, 8A Low Logic Level
Description:
The NTE56051 and NTE56052 are glass passivated, Low Logic Level TRIACs in a TO220 type pack-
age designed for use in general purpose bidirectional switching and phase control applications.
These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits, and
other low power gate trigger circuits.
Absolute Maximum Ratings:
Repetitive Peak Off–Sate Voltage (Note 1), VDRM
NTE56051 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
NTE56052 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
RMS On–State Current (Full Sine Wave, TMB 102°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Non–Repetitive Peak On–State Current, ITSM
(Full Sine Wave, TJ = +125°C prior to Surge, with Reapplied VDRMmax)
t = 20ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55A
t = 16.7ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60A
I2t for Fusing (t = 10ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A2sec
Repetitive Rate–of–Rise of On–State Current after Triggering, dIT/dt
(ITM = 12A, IG = 0.2A, dIG/dt = 0.2A/µs)
MT2 (+), G (+) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/µs
MT2 (+), G (–) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/µs
MT2 (–), G (–) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/µs
MT2 (–), G (+) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A/µs
Peak Gate Current, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Peak Gate Voltage, VGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Peak Gate Power, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W
Average Gate Power (Over Any 20ms Period), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Thermal Resistance, Junction–to–Mounting Base, RthJMB
Full Cycle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0K/W
Half Cycle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4K/W
Typical Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60K/W
Note 1. Although not recommended, off–state voltages up to 800V may be applied without damage,
but the TRIAC may switch to the on–State. The rate–of–rise of current should not exceed
6A/µs.




 NTE56052
Electrical Characteristics: (TJ = +25°C unless otherwise specfied)
Parameter
Symbol
Test Conditions
Static Characteristics
Gate Trigger Current
MT2 (+), G (+)
MT2 (+), G ()
MT2 (), G ()
MT2 (), G (+)
Latching Current
MT2 (+), G (+)
MT2 (+), G ()
MT2 (), G ()
MT2 (), G (+)
Holding Current
OnState Voltage
Gate Trigger Voltage
OffState Leakage Current
Dynamic Characteristics
IGT VD = 12V, IT = 0.1A
IL VD = 12V, IT = 0.1A
IH VD = 12V, IT = 0.1A
VT IT = 5A
VGT VD = 12V, IT = 0.1A
VD = 400V, IT = 0.1A, TJ = +125°C
ID VD = VDRMmax, TJ = +125°C
Critical RateofRise of
OffState Voltage
Gate Controlled TurnOn Time
dVD/dt
tgt
VDM = 67% VDRMmax, TJ = +125°C,
Exponential Waveform, RGK = 1k
ITM = 12A, VD = VDRMmax, IG = 0.1A,
dIG/dt = 5A/µs
Min Typ Max Unit
2.5 5 mA
3.5 5 mA
3.5 5 mA
6.5 10 mA
1.6 15 mA
8.5 20 mA
1.2 15 mA
2.5 20 mA
1.5 10 mA
1.4 1.7 V
0.7 1.5 V
0.25 0.4
V
0.1 0.5 mA
5 V/µs
2 µs
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
MT2
.500
(12.7)
Max
.070 (1.78) Max
MT1
.100 (2.54)
.250 (6.35)
Max
.500
(12.7)
Min
Gate
MT2








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