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TRIAC. NTE56065 Datasheet

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TRIAC. NTE56065 Datasheet
















NTE56065 TRIAC. Datasheet pdf. Equivalent













Part

NTE56065

Description

TRIAC



Feature


NTE56065 TRIAC, 600VRM, 12A, High Commut ation Description: The NTE56065 is a gl ass passivated, high commutation TRIAC in an isolated full–pack type package designed for use in circuits where hig h static and dynamic dV/dt and high dI/ dt can occur. This device will commutat e the full rated RMS current at the max imum rated junction temperature, withou t the aid of a snubb.
Manufacture

NTE Electronics

Datasheet
Download NTE56065 Datasheet


NTE Electronics NTE56065

NTE56065; er. Absolute Maximum Ratings: Repetitive Peak Off–Sate Voltage (Note 1), VDRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600 V RMS On–State Current (Full Sine Wav e, THS ≤ 56°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Non–Repetitive Peak On–State C urrent, ITSM (Full Sine Wave, TJ = +25 C prior to Surge) t = 20ms . .


NTE Electronics NTE56065

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95A t = 16.7ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105A I2t for Fusing (t = 10ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..


NTE Electronics NTE56065

. . . . . . . . . . . . . . . . . . . . . 45A2sec Repetitive Rate–of–Rise of On–State Current after Triggering, dIT/dt (ITM = 20A, IG = 0.2A, dIG/dt = 0.2A/µs) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100A/µs Peak Gate Current, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .





Part

NTE56065

Description

TRIAC



Feature


NTE56065 TRIAC, 600VRM, 12A, High Commut ation Description: The NTE56065 is a gl ass passivated, high commutation TRIAC in an isolated full–pack type package designed for use in circuits where hig h static and dynamic dV/dt and high dI/ dt can occur. This device will commutat e the full rated RMS current at the max imum rated junction temperature, withou t the aid of a snubb.
Manufacture

NTE Electronics

Datasheet
Download NTE56065 Datasheet




 NTE56065
NTE56065
TRIAC, 600VRM, 12A,
High Commutation
Description:
The NTE56065 is a glass passivated, high commutation TRIAC in an isolated full–pack type package
designed for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This device
will commutate the full rated RMS current at the maximum rated junction temperature, without the aid
of a snubber.
Absolute Maximum Ratings:
Repetitive Peak Off–Sate Voltage (Note 1), VDRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
RMS On–State Current (Full Sine Wave, THS 56°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Non–Repetitive Peak On–State Current, ITSM
(Full Sine Wave, TJ = +25°C prior to Surge)
t = 20ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95A
t = 16.7ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105A
I2t for Fusing (t = 10ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45A2sec
Repetitive Rate–of–Rise of On–State Current after Triggering, dIT/dt
(ITM = 20A, IG = 0.2A, dIG/dt = 0.2A/µs) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100A/µs
Peak Gate Current, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Peak Gate Voltage, VGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Peak Gate Power, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W
Average Gate Power (Over Any 20ms Period), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Thermal Resistance, Junction–to–Heatsink (Full or Half Cycle), RthJHS
With Heatsink Compound . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0K/W
Without Heatsink Compound . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5K/W
Typical Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55K/W
Note 1. Although not recommended, off–state voltages up to 800V may be applied without damage,
but the TRIAC may switch to the on–state. The rate–of–rise of current should not exceed
15A/µs.




 NTE56065
Electrical Characteristics: (TJ = +25°C unless otherwise specfied)
Parameter
Symbol
Test Conditions
Static Characteristics
Gate Trigger Current
MT2 (+), G (+)
MT2 (+), G ()
MT2 (), G ()
Latching Current
MT2 (+), G (+)
MT2 (+), G ()
MT2 (), G ()
Holding Current
OnState Voltage
Gate Trigger Voltage
OffState Leakage Current
Dynamic Characteristics
IGT VD = 12V, IT = 0.1A, Note 2
IL VD = 12V, IT = 0.1A
IH VD = 12V, IT = 0.1A
VT IT = 17A
VGT VD = 12V, IT = 0.1A
VD = 400V, IT = 0.1A, TJ = +125°C
ID VD = 600V, TJ = +125°C
Critical RateofRise of
OffState Voltage
dVD/dt VDM = 402V, TJ = +125°C,
Exponential Waveform, Gate Open
Critical RateofChange of
Commutating Current
dIcom/dt VDM = 400V, TJ = +125°C, ITRMS = 12A,
without Snubber, Gate Open
Gate Controlled TurnOn Time
Isolation Characteristics
tgt ITM = 12A, VD = VDRMmax, IG = 0.1A,
dIG/dt = 5A/µs
RMS Isolation Voltage from All
3 Pins to External Heatsink
VISOL f = 50 60Hz, Sinusoidal Waveform,
R.H. 65%, Clean and Dustfree
Capacitance from T2 to
External Heatsink
CISOL f = 1MHz
Min
2
2
2
0.25
1000
Typ
18
21
34
31
34
30
31
1.3
0.7
0.4
0.1
4000
24
2
10
Max
50
50
50
60
90
60
60
1.6
1.5
0.5
2500
Unit
mA
mA
mA
mA
mA
mA
mA
V
V
V
mA
V/µs
A/ms
µs
V
pF
Note 2. Device does not trigger in the MT2 (), G (+) quadrant.
.181 (4.6) Max
.114 (2.9)
.252
(6.4)
.126 (3.2) Dia Max
.405 (10.3)
Max
Isol
.622
(15.0)
Max
MT2
.118
(3.0)
Max
.531
(13.5)
Min
MT1
G
.098 (2.5)
.100 (2.54)








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