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NTE5646 Dataheets PDF



Part Number NTE5646
Manufacturers NTE Electronics
Logo NTE Electronics
Description TRIAC
Datasheet NTE5646 DatasheetNTE5646 Datasheet (PDF)

NTE5646 TRIAC – Internally Triggered Description: The NTE5646 is a TRIAC that includes a diac trigger mounted inside the same package. This device saves the user the added expense of buying a discrete diac and the assembling associated with a gated triac. This device includes a dial trigger mounted inside the same isolated TO220 type package. Absolute Maximum Ratings: Repetitive Peak Off–State Voltage (Gate Open, TJ = +110°C, Note 1), VDRM . . . . . . . . . . . . . . 600V RMS On–State Current (T.

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NTE5646 TRIAC – Internally Triggered Description: The NTE5646 is a TRIAC that includes a diac trigger mounted inside the same package. This device saves the user the added expense of buying a discrete diac and the assembling associated with a gated triac. This device includes a dial trigger mounted inside the same isolated TO220 type package. Absolute Maximum Ratings: Repetitive Peak Off–State Voltage (Gate Open, TJ = +110°C, Note 1), VDRM . . . . . . . . . . . . . . 600V RMS On–State Current (TC = +80°C, Conduction Angle of 360°), IT(RMS) . . . . . . . . . . . . . . . . . . 10A Peak Surge (Non–Repetitive) On–State Current (One Cycle, at 50Hz or 60Hz), ITSM . . . . . . . 100A Peak Gate–Trigger Current (3sec Max), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A Operating Junction Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +110°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C Typical Thermal Resistance, Junction to Case, RΘJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8°C/W Note 1. All values apply in either direction. Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Peak Off–State Current Maximum On–State Voltage DC Holding Current Critical Rate–of–Rise of Off–State Voltage Critical Rate–of–Rise of Commutation Voltage Gate–Controlled Turn–On Time Trigger DIAC Specifications Breakover Voltage Symmetry Breakover Voltage (Forward & Reverse) Dynamic Breakback Voltage (Forward & Reverse) Peak Breakover Current Trigger Firing Capacitance ∆V(BO) VBO [∆V ±] IBO C – 30 – – – 3 – 5 200 0.1 – 45 – – – V V V µA µF Symbol IDRM VTM IHOLD Critical dv/dt Test Conditions Gate Open, TV = +110°C, VDRM = 600V, Note 1 IT = 10A, Note 1 Gate Open, Note 1 VD = 600V, Gate Open, TC = +110C, Note 1 Min – – – – – – Typ 0.5 – – 60 4 3 Max – 1.5 60 – – – Unit mA V mA V/µs V/µs µs Commutating TC = +80°C, Gate Unenergized, dv/dt VD = 600V, IT = 10A, Note 1 Tgt VD = 600V, tR = 0.1µs, IT = 10A (Peak) Note 1. All values apply in either direction. .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max Isolated .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max MT1 .100 (2.54) Gate MT2 .


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