DatasheetsPDF.com

TRIAC. NTE5650 Datasheet

DatasheetsPDF.com

TRIAC. NTE5650 Datasheet
















NTE5650 TRIAC. Datasheet pdf. Equivalent













Part

NTE5650

Description

TRIAC



Feature


NTE5650 thru NTE5653 TRIAC – 100VRM, 2 .5A Description: The NTE5650 through NT E5653 sensitive gate TRIACs are designe d to be driven directly with IC and MOS devices. These devices features a void –free glass passivated chip and are h ermetically sealed in TO–5 outline ca ns. The NTE5650 through NTE5653 are bi directional triode thyristors and may be switched from off– sta.
Manufacture

NTE Electronics

Datasheet
Download NTE5650 Datasheet


NTE Electronics NTE5650

NTE5650; te to conduction for either polarity of applied voltage with positive or negati ve gate–trigger current and are desig ned for control applications in lightin g, heating, cooling and static switchin g relays. Absolute Maximum Ratings: Rep etitive Peak Off–State Voltage (TJ = +90°C, Gate Open, Note 1), VDROM NTE56 50 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..


NTE Electronics NTE5650

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V NTE5651 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5652 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.


NTE Electronics NTE5650

00V NTE5653 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V RMS On –State Current (TC = +75°C and Condu ction Angle of 360°), IT(RMS) . . . . . . . . . . . . . . . 3A Peak Surge (No n–Repetitive) On–State Current (One –Cycleat 50Hz or 60Hz), ITSM . . . . . . . . 30A Peak Gate–Trigge.





Part

NTE5650

Description

TRIAC



Feature


NTE5650 thru NTE5653 TRIAC – 100VRM, 2 .5A Description: The NTE5650 through NT E5653 sensitive gate TRIACs are designe d to be driven directly with IC and MOS devices. These devices features a void –free glass passivated chip and are h ermetically sealed in TO–5 outline ca ns. The NTE5650 through NTE5653 are bi directional triode thyristors and may be switched from off– sta.
Manufacture

NTE Electronics

Datasheet
Download NTE5650 Datasheet




 NTE5650
NTE5650 thru NTE5653
TRIAC – 100VRM, 2.5A
Description:
The NTE5650 through NTE5653 sensitive gate TRIACs are designed to be driven directly with IC and
MOS devices. These devices features a void–free glass passivated chip and are hermetically sealed
in TO–5 outline cans.
The NTE5650 through NTE5653 are bi–directional triode thyristors and may be switched from off–
state to conduction for either polarity of applied voltage with positive or negative gate–trigger current
and are designed for control applications in lighting, heating, cooling and static switching relays.
Absolute Maximum Ratings:
Repetitive Peak Off–State Voltage (TJ = +90°C, Gate Open, Note 1), VDROM
NTE5650 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
NTE5651 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5652 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5653 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
RMS On–State Current (TC = +75°C and Conduction Angle of 360°), IT(RMS) . . . . . . . . . . . . . . . 3A
Peak Surge (Non–Repetitive) On–State Current (One–Cycleat 50Hz or 60Hz), ITSM . . . . . . . . 30A
Peak Gate–Trigger Current (3µsec, Max.), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Peak Gate–Power Dissipation (IGT IGTM for 3µsec. Max.), PGM . . . . . . . . . . . . . . . . . . . . . . . . 20W
Average Gate–Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2W
Operating Temperature Range (TC), Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +90°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Typical Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4°C/W
Note 1. All values apply in either direction.
Electrical Characteristics: (At Maximum Ratings & Specified Case Temperature)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Peak Off–State Current
IDROM TJ = +90°C, VDROM = Max Rating,
Gate Open, Note 1
– – 0.75 mA
Maximum On–State Voltage
DC Holding Current
Critical Rate–of–Rise of Off–State
Voltage
VTM
IHO
Critical
dv/dt
TC = +25°C, iT = 5A (Peak), Note 1
TC = +25°C, Gate Open
TC = +90°C, vD = VDROM, Gate Open,
Note 1
– 1.85 V
– 5 mA
3 – V/µs
DC Gate–Trigger Current
MT2 (+) Gate (+), MT2 (–) Gate (–) IGT TC = + 25°C, vD = 6V, RL = 39
MT2 (+) Gate (–), MT2 (–) Gate (+)
– – 3 mA
Note 1. All values apply in either direction.




 NTE5650
Electrical Characteristics (Contd): (At Maximum Ratings & Specified Case Temperature)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
DC Gate Trigger Voltage
GateControlled TurnOn Time
Fusing Current (For TRIAC Protection)
VGT TC = +25°C, vD = 6V, RL = 39
– – 2.2 V
tgt TC = +25°C, vD = VDROM, IGT = 80mA, 2.2 µs
tr = 0.1µs, iT = 10A (Peak)
I2t T = 1.25 to 10ms
– – 3 A2s
.250 (6.35)
Max
1.500 (38.1)
Min
.352 (8.95) Dia Max
.320 (98.13) Dia Max
MT1
45°
.019 (0.5) Dia
Gate
MT2
.031 (.793)
TO5








Recommended third-party NTE5650 Datasheet







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)