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TRIAC. NTE5657 Datasheet

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TRIAC. NTE5657 Datasheet
















NTE5657 TRIAC. Datasheet pdf. Equivalent













Part

NTE5657

Description

TRIAC



Feature


NTE5655 thru NTE5657 TRIAC – 800mA Sen sitive Gate Description: The NTE5655 th rough NTE5657 are 800mA sensitive gate TRIACs in a TO92 type package designed to be driven directly with IC and MOS d evices. These TRIACs feature void–fre e glass passivated chips. These NTE dev ices are bi–directional triode thyris tors and may be switched from off–sta te to conduction for eithe.
Manufacture

NTE Electronics

Datasheet
Download NTE5657 Datasheet


NTE Electronics NTE5657

NTE5657; r polarity of applied voltage with posit ive or negative gate trigger current. T hey are designed for control applicatio ns in lighting, heating, cooling and st atic switching relays. Absolute Maximum Ratings: Repetitive Peak Off–State V oltage (Gate Open, TJ = +100°C), VDRM NTE5655 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..


NTE Electronics NTE5657

. . . . . . . . . . . . . . . . . . . . . 200V NTE5656 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V N TE5657 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V RMS On–S tate Current (TC = +.


NTE Electronics NTE5657

75°C, Conduction Angle of 360°C), ITRM S . . . . . . . . . . . . . . . 800mA P eak Surge (Non–Repetitive) On–State Current (One Cycle, 50Hz or 60Hz), ITS M . . . . . . . . . . . 8A Peak Gate– Trigger Current (3µs Max), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500m A Peak Gate–Power Dissipation (IGT IGTM for 3µs Max), PGM . . . .





Part

NTE5657

Description

TRIAC



Feature


NTE5655 thru NTE5657 TRIAC – 800mA Sen sitive Gate Description: The NTE5655 th rough NTE5657 are 800mA sensitive gate TRIACs in a TO92 type package designed to be driven directly with IC and MOS d evices. These TRIACs feature void–fre e glass passivated chips. These NTE dev ices are bi–directional triode thyris tors and may be switched from off–sta te to conduction for eithe.
Manufacture

NTE Electronics

Datasheet
Download NTE5657 Datasheet




 NTE5657
NTE5655 thru NTE5657
TRIAC – 800mA
Sensitive Gate
Description:
The NTE5655 through NTE5657 are 800mA sensitive gate TRIACs in a TO92 type package designed
to be driven directly with IC and MOS devices. These TRIACs feature void–free glass passivated
chips.
These NTE devices are bi–directional triode thyristors and may be switched from off–state to conduc-
tion for either polarity of applied voltage with positive or negative gate trigger current. They are de-
signed for control applications in lighting, heating, cooling and static switching relays.
Absolute Maximum Ratings:
Repetitive Peak Off–State Voltage (Gate Open, TJ = +100°C), VDRM
NTE5655 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5656 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5657 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
RMS On–State Current (TC = +75°C, Conduction Angle of 360°C), ITRMS . . . . . . . . . . . . . . . 800mA
Peak Surge (Non–Repetitive) On–State Current (One Cycle, 50Hz or 60Hz), ITSM . . . . . . . . . . . 8A
Peak Gate–Trigger Current (3µs Max), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Peak Gate–Power Dissipation (IGT IGTM for 3µs Max), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W
Average Gate–Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Typical Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75°C/W
Electrical Characteristics: (TC = +25°C, Maximum Ratings unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Peak Off–State Current
IDRM VDRM = Max Rating, Gate Open,
TJ = +100°C
– 0.75 – mA
Max. On–State Voltage
VTM iT = 800mA (Peak)
– – 1.9 V
DC Holding Current
IH Gate Open
– – 15 mA
Critical Rate–of–Rise of Off–State Voltage Critical VD = VDRM, Gate Open, TC = +100°C – 10 – V/µs
dv/dt




 NTE5657
Electrical Characteristics (Contd): (TC = +25°C, Maximum Ratings unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
DC Gate Trigger Current
T2 (+) Gate (+), T2 () Gate ()
T2 (+) Gate (), T2 () Gate (+)
IGT VD = 6V, RL = 100
– – 5 mA
DC Gate Trigger Voltage
VGT VD = 6V, RL = 100
– – 2.2 V
GateControlled TurnOn Time
tgt VD = VDRM, IGT = 80mA, tr = 0.1µs,
iT = 10A (Peak)
2.2
µs
.210
(5.33)
Max
.135 (3.45) Min
Seating
Plane
.500
(12.7)
Min
MT1
MT2
Gate
.021 (.445) Dia Max
.100 (2.54)
.050 (1.27)
.105 (2.67) Max
.205 (5.2) Max
.165 (4.2) Max
.105 (2.67) Max








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