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Powerblock Module. NTE5728 Datasheet

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Powerblock Module. NTE5728 Datasheet
















NTE5728 Module. Datasheet pdf. Equivalent













Part

NTE5728

Description

Powerblock Module



Feature


NTE5728 Powerblock Module Description: T he NTE5728 uses high voltage power thyr istors/diodes and is electrically isola ted from the metal base, allowing commo n heatsinks and compact assemblies to b e built. This device is intended for ge neral purpose applications such as batt ery chargers, welders and plating equip ment and where high voltage and high cu rrent are required.
Manufacture

NTE Electronics

Datasheet
Download NTE5728 Datasheet


NTE Electronics NTE5728

NTE5728; . Features: D High Voltage D Electricall y Isolated Base Plate D 3000VRMS Isolat ing Voltage D High Surge Capability D L arge Creepage Distances Ratings and Cha racteristics: Average Forward Current ( TC = +85°C, 180° Conduction, Half Sin e Wave), IF(AV) . . . . . . . . . . 250 A Maximum RMS On–State Current (As AC Switch), IT(RMS) . . . . . . . . . . . . . . . . . . . . . ..


NTE Electronics NTE5728

. . . . . . . . 555A Maximum Repetitive Peak Reverse and Off–State Blocking Voltage, VRRM, VDRM . . . . . . . . 160 0V Maximum Non–Repetitive Peak Revers e Voltage, VRSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1700V Maximum Peak Reverse and Off–St ate Leakage Current (TJ = +130°C), IRR M, IDRM . . . . . . 50mA RMS Isolation Voltage (50Hz, Circuit to.


NTE Electronics NTE5728

Base, All Terminals Shorted, t = 1s), V ISO . . . . . . . . 3000V Critical Rate of Rise of Off–State Voltage (TJ = + 130°C), dv/dt (Linear to 80% Rated VDR M) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V/µs (Linear to 67% Rated VDRM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .





Part

NTE5728

Description

Powerblock Module



Feature


NTE5728 Powerblock Module Description: T he NTE5728 uses high voltage power thyr istors/diodes and is electrically isola ted from the metal base, allowing commo n heatsinks and compact assemblies to b e built. This device is intended for ge neral purpose applications such as batt ery chargers, welders and plating equip ment and where high voltage and high cu rrent are required.
Manufacture

NTE Electronics

Datasheet
Download NTE5728 Datasheet




 NTE5728
NTE5728
Powerblock Module
Description:
The NTE5728 uses high voltage power thyristors/diodes and is electrically isolated from the metal
base, allowing common heatsinks and compact assemblies to be built. This device is intended for
general purpose applications such as battery chargers, welders and plating equipment and where
high voltage and high current are required.
Features:
D High Voltage
D Electrically Isolated Base Plate
D 3000VRMS Isolating Voltage
D High Surge Capability
D Large Creepage Distances
Ratings and Characteristics:
Average Forward Current (TC = +85°C, 180° Conduction, Half Sine Wave), IF(AV) . . . . . . . . . . 250A
Maximum RMS On–State Current (As AC Switch), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 555A
Maximum Repetitive Peak Reverse and Off–State Blocking Voltage, VRRM, VDRM . . . . . . . . 1600V
Maximum Non–Repetitive Peak Reverse Voltage, VRSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1700V
Maximum Peak Reverse and Off–State Leakage Current (TJ = +130°C), IRRM, IDRM . . . . . . 50mA
RMS Isolation Voltage (50Hz, Circuit to Base, All Terminals Shorted, t = 1s), VISO . . . . . . . . 3000V
Critical Rate of Rise of Off–State Voltage (TJ = +130°C), dv/dt
(Linear to 80% Rated VDRM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V/µs
(Linear to 67% Rated VDRM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V/µs
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +130°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Thermal Resistance, Junction–to–Case (Per Junction, DC Operation), RthJC . . . . . . . . . 0.125°C/W
Thermal Resistance, Case–to–Sink (Per Module, Note 1), RthCS . . . . . . . . . . . . . . . . . . . . 0.02°C/W
Note 1. Mounting surface flat, smooth and greased.




 NTE5728
Electrical Specifications:
Parameter
Symbol
Test Conditions
Rating Unit
Maximum Peak OneCycle
NonRepetitive Surge Current
IFSM t = 10ms
t = 8.3ms
Sinusoidal Half Wave, 100% VRRM 7150
Reapplied, Initial TJ = +130°C
7500
A
A
Maximum I2t for Fusing
Maximum I2pt
I2t
I2pt
t = 10ms
t = 8.3ms
Sinusoidal Half Wave, No Voltage
Reapplied, Initial TJ = +130°C
t = 10ms
t = 8.3ms
Sinusoidal Half Wave, 100% VRRM
Reapplied, Initial TJ = +130°C
t = 10ms
t = 8.3ms
Sinusoidal Half Wave, No Voltage
Reapplied, Initial TJ = +130°C
t = 0.1 to 10ms, no voltage reapplied
8500
8900
255
233
361
330
3610
A
A
A2s
A2s
A2s
A2s
A2pt
Threshold Voltage, Low level
Threshold Voltage, High level
OnState Slope Resistance, Low Level
OnState Slope Resistance, High Level
Maximum OnState Voltage Drop
Maximum Holding Current
Maximum Latching Current
Maximum Peak Gate Power
Maximum Average Gate Power
Maximum Peak Gate Current
Maximum Peak Negative Gate Voltage
Maximum Required DC Gate Trigger
Voltage to Trigger
Maximum Required DC Gate Trigger
Current to Trigger
Maximum Gate Voltage that will not
Trigger
Maximum Gate Current that will not
Trigger
Maximum Rate of Rise of
TurnedOn Current
Typical Delay Time
Typical Rise Time
Typical TurnOff Time
VT(TO)1
VT(TO)2
rt1
rt2
VTM
IH
IL
PGM
PG(AV)
+IGM
VGT
VGT
IGT
VGD
IGD
di/dt
td
tr
tq
TJ = +130°C, (16.7% x π x IT(AV) < I < π x IT(AV))
TJ = +130°C, (π x IT(AV) < I < 20 x π x IT(AV))
TJ = +130°C, (16.7% x π x IT(AV) < I < π x IT(AV))
TJ = +130°C, (π x IT(AV) < I < 20 x π x IT(AV))
TJ = +130°C, ITM = π x IT(AV), 180° Condition,
Av. Power = VT(TO) x IT(AV) + rt x (IT(RMS))2
Anode Supply = 12V, Initial IT = 30A, TJ = +25°C
Anode Supply = 12V, Resistive Load = 1,
Gat Pulse: 10V, 100µs, TJ = +25°C
TJ = +130°C, tp 5ms
TJ = +130°C, f = 50Hz
TJ = +130°C, tp 5ms
TJ = +130°C, tp 5ms
TJ = 40°C Anode Supply = 12V,
TJ = +25°C Resistive Load: RA = 1
TJ = +130°C
TJ = 40°C Anode Supply = 12V,
TJ = +25°C Resistive Load: RA = 1
TJ = +130°C
TJ = +130°C, Rated VDRM Applied
0.97
1.00
0.60
0.57
1.44
500
1000
10
2.0
3.0
5.0
4.0
3.0
2.0
350
200
100
0.25
TJ = +130°C, Rated VDRM Applied
10
TJ = +130°C, ITM = 400A, Rated VDRM Applied
500
TJ = +25°C, Gate Current = 1A diG/dt = 1A/µs,
VD = 0.67% VDRM
1.0
2.0
TJ = +25°C, ITM = 300A, dI/dt = 15A/µs, VR = 50V, 50150
dV/dt = 20V/µs, Gate 0V, 100
V
V
m
m
V
mA
mA
W
W
A
V
V
V
V
mA
mA
mA
V
mA
A/µs
µs
µs
µs




 NTE5728
Circuit Diagram
G2
K2
AC +
K1
G1
+
AC
K2 G2
K1 G1
.244 (6.2) Dia
(2 Places)
.980 (25.0)
.270 (7.0)
M6 x 1 Screw (3 Places)
3.150 (80.0)
.980 (25.0)
1.340
(34.0)
1.180
(30.0)
1.850
(47.0)
3.700 (94.0)
NOTE: Can be used with Heat Sink NTE441A




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