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NTE5850 Dataheets PDF



Part Number NTE5850
Manufacturers NTE Electronics
Logo NTE Electronics
Description Silicon Power Rectifier Diode / 6 Amp
Datasheet NTE5850 DatasheetNTE5850 Datasheet (PDF)

NTE5850 thru NTE5869 Silicon Power Rectifier Diode, 6 Amp Description and Features: The NTE5850 through NTE5869 are low power general purpose rectifier diodes in a DO4 type package designed for battery chargers, converters, power supplies, and machine tool controls. Features: D High Surge Current Capability D High Voltage Available D Designed for a Wide Range of Applications D Available in Anode–to–Case or Cathode–to–Case Style Ratings and Characteristics: Average Forward Current (TC = +158°C Ma.

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NTE5850 thru NTE5869 Silicon Power Rectifier Diode, 6 Amp Description and Features: The NTE5850 through NTE5869 are low power general purpose rectifier diodes in a DO4 type package designed for battery chargers, converters, power supplies, and machine tool controls. Features: D High Surge Current Capability D High Voltage Available D Designed for a Wide Range of Applications D Available in Anode–to–Case or Cathode–to–Case Style Ratings and Characteristics: Average Forward Current (TC = +158°C Max), IF(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A Maximum Forward Surge Current, IFSM 50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 134A 60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 141A Fusing Current, I2t 50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90A2s 60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 141A2s Fusing Current, I2pt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1270A2ps Maximum Reverse Recovery Voltage Range, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 to 1000V Voltage Ratings: (TJ = +175°C) NTE Type Number Cathode to Case Anode to Case VRRM–Max Repetitive Peak Reverse Volt. (V) VRSM–Max Non–Repetitive Peak Reverse Voltage (V) VR–Max. Direct Reverse Voltage (V) VR(SR) Minimum Avalanche Voltage (V) IRM–Max Reverse Current Rated VRRM (mA) 5850 5852 5854 5856 5858 5860 5862 5866 5868 5851 5853 5855 5857 5859 5861 5863 5867 5869 50 100 200 300 400 500 600 800 1000 75 150 275 385 500 613 725 950 1200 50 100 200 300 400 50 600 800 1000 – – – – 500 613 725 950 1200 12 12 12 12 12 12 12 12 12 Electrical Specifications: Parameter Maximum Average Forward Current Maximum RMS Forward Current Maximum Peak One–Cycle Non–Repetitive Surge Current Symbol IF (AV) IF(RMS) IFSM t = 10ms t = 8.3ms t = 10ms t = 8.3ms Maximum I2t for Individual Device Fusing Maximum I2pt Maximum Peak Forward Voltage Maximum Value of Threshold Voltage Maximum Value of Forward Slope Resistance I2t I2pt VFM VM (TO) rt t = 10ms t = 8.3ms Sinusoidal Half Wave, No voltage reapplied 100% rated voltage reapplied, TJ = +175°C 100% rated voltage reapplied, Initial TJ = +175°C Test Conditions 180° sinusoidal condition, TC = +158°C Max Rating 6 9.5 134 141 159 167 127 116 1270 1.10 0.60 17.2 Unit A A A A A A A2s A2s A2pt V V mΩ t = 0.1 to 10ms, No voltage reapplied, Note 1 IFM = 19A, TJ = +25°C TJ = +175°C TJ = +175°C Note 1. I2t for time tx = I2Ǩt S Ǩtx Thermal–Mechanical Specifications: Parameter Maximum Operation Junction Temperature Maximum Storage Temperature Maximum.


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