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12 Amp. NTE5870 Datasheet

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12 Amp. NTE5870 Datasheet
















NTE5870 Amp. Datasheet pdf. Equivalent













Part

NTE5870

Description

Silicon Power Rectifier Diode / 12 Amp



Feature


NTE5810 & NTE5811, NTE5870 thru NTE5891 Silicon Power Rectifier Diode, 12 Amp D escription: The NTE5810, NTE5811, and N TE5870 through NTE5891 are low power ge neral purpose rectifier diodes in a DO4 type package designed for battery char gers, converters, power supplies, and m achine tool controls. Features: D High Surge Current Capability D High Voltage Available D Desig.
Manufacture

NTE Electronics

Datasheet
Download NTE5870 Datasheet


NTE Electronics NTE5870

NTE5870; ned for a Wide Range of Applications D A vailable in Anode–to–Case or Cathod e–to–Case Style Ratings and Charact eristics: Average Forward Current (TC = +144°C Max), IF(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Maximum Forward Sur ge Current, IFSM 50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..


NTE Electronics NTE5870

. . . . . . . . . . . . . . . . . . . . . . . . . . . . 230A 60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240A Fusing Current, I2t 50H z . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..


NTE Electronics NTE5870

. 260A2s 60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240A2s Fusing Current, I2pt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3580A2ps Maximum Rev erse Recovery Voltage Range, VRRM . . . . . . . . . . . ..





Part

NTE5870

Description

Silicon Power Rectifier Diode / 12 Amp



Feature


NTE5810 & NTE5811, NTE5870 thru NTE5891 Silicon Power Rectifier Diode, 12 Amp D escription: The NTE5810, NTE5811, and N TE5870 through NTE5891 are low power ge neral purpose rectifier diodes in a DO4 type package designed for battery char gers, converters, power supplies, and m achine tool controls. Features: D High Surge Current Capability D High Voltage Available D Desig.
Manufacture

NTE Electronics

Datasheet
Download NTE5870 Datasheet




 NTE5870
NTE5810 & NTE5811,
NTE5870 thru NTE5891
Silicon Power Rectifier Diode, 12 Amp
Description:
The NTE5810, NTE5811, and NTE5870 through NTE5891 are low power general purpose rectifier
diodes in a DO4 type package designed for battery chargers, converters, power supplies, and ma-
chine tool controls.
Features:
D High Surge Current Capability
D High Voltage Available
D Designed for a Wide Range of Applications
D Available in Anode–to–Case or Cathode–to–Case Style
Ratings and Characteristics:
Average Forward Current (TC = +144°C Max), IF(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Maximum Forward Surge Current, IFSM
50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 230A
60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240A
Fusing Current, I2t
50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260A2s
60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240A2s
Fusing Current, I2pt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3580A2ps
Maximum Reverse Recovery Voltage Range, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 to 1200V
Voltage Ratings: (TJ = +175°C)
NTE Type Number
Cathode
to Case
5870
Anode
to Case
5871
5872 5873
5874 5875
5876 5877
5878 5879
5880 5881
5882 5883
5886 5887
5890 5891
5810 5811
VRRM–Max
Repetitive Peak
Reverse Volt.
(V)
50
100
200
300
400
500
600
800
1000
1200
VRSM–Max
Non–Repetitive Peak
Reverse Voltage
(V)
75
150
275
385
500
613
725
950
1200
1400
VR–Max.
Direct Reverse
Voltage
(V)
50
100
200
300
400
50
600
800
1000
1200
VR(SR)
Minimum Avalanche
Voltage
(V)
500
626
750
950
1150
1350
IRM–Max
Reverse Current
Rated VRRM
(mA)
12
12
12
12
12
12
12
12
12
12




 NTE5870
Electrical Specifications:
Parameter
Symbol
Test Conditions
Maximum Average Forward Current
Maximum RMS Forward Current
Maximum Peak OneCycle
NonRepetitive Surge Current
IF (AV)
IF(RMS)
IFSM
180° sinusoidal condition, TC = +144°C Max
t = 10ms Sinusoidal Half Wave,
t = 8.3ms No voltage reapplied
Maximum I2t for Individual Device
Fusing
Maximum I2pt
I2t
I2pt
t = 10ms 100% rated voltage reapplied,
t = 8.3ms TJ = +175°C
t = 10ms 100% rated voltage reapplied,
t = 8.3ms Initial TJ = +175°C
t = 0.1 to 10ms, No voltage reapplied, Note 1
Maximum Peak Forward Voltage
VFM
Maximum Value of Threshold
Voltage
VM (TO)
Maximum Value of Forward Slope
Resistance
rt
Note 1. I2t for time tx = I2Ǩt S Ǩtx
IFM = 38A, TJ = +25°C
TJ = +175°C
TJ = +175°C
Rating
12
19
225
235
265
280
351
320
3511
1.26
0.68
Unit
A
A
A
A
A
A
A2s
A2s
A2pt
V
V
13.51 m
ThermalMechanical Specifications:
Parameter
Symbol
Test Conditions
Rating Unit
Maximum Operation Junction Temperature
Maximum Storage Temperature
Maximum Internal Thermal Resistance
JunctiontoCase
Thermal Resistance, CasetoSink
Mounting Torque
Approximate Weight
TJ
Tstg
RthJC
DC operation
65 to + 175
65 to + 200
2.0
°C
°C
K/W
RthCS
T
wt
Mounting surface flat, smooth and
greased
0.5
K/W
Nonlubricated threads
1.2 1.5 mN
(10.5 13.5) (inlb)
11 (0.25) g (oz)
.437
(11.1)
Max
.250 (6.35) Max
.060 (1.52)
Dia Min
.175 (4.45) Max
1032 NF2A
.424 (10.8)
Dia Max
.405
(10.3)
Max
1.250 (31.75) Max
.453
(11.5)
Max








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