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Speed Switch. NTE593 Datasheet

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Speed Switch. NTE593 Datasheet
















NTE593 Switch. Datasheet pdf. Equivalent













Part

NTE593

Description

Silicon Diode / High Speed Switch



Feature


NTE593 Silicon Diode, High Speed Switch Description: The NTE593 is a silicon ep itaxial high–speed diode in an SOT– 23 type surface mount package. This dev ice is intended for high–speed switch ing in hybrid thick–film circuits. Ab solute Maximum Ratings: Continuous Reve rse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Manufacture

NTE Electronics

Datasheet
Download NTE593 Datasheet


NTE Electronics NTE593

NTE593; . . . . . . . . . 75V Repetitive Peak Re verse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85V Non–Repetitive Peak Forward Current (t = 1s), IFSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Average Rectified Forward Curr ent (Average over any 20ms period, Note 1), IF(Av) . . . . .


NTE Electronics NTE593

. . 250mA DC Forward Current (TA ≤ +25 °C, Note 2), IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA Repetitive Peak Forward Current, IFRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA Total Power Dissipation (TA ≤ +25°C ), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . ..


NTE Electronics NTE593

. . . . . . . . . . . . . . 200mW Opera ting Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Rang e, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Therma l Resistance, Junction–to–Ambient ( Note 2), RthJA . . . . . . .





Part

NTE593

Description

Silicon Diode / High Speed Switch



Feature


NTE593 Silicon Diode, High Speed Switch Description: The NTE593 is a silicon ep itaxial high–speed diode in an SOT– 23 type surface mount package. This dev ice is intended for high–speed switch ing in hybrid thick–film circuits. Ab solute Maximum Ratings: Continuous Reve rse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Manufacture

NTE Electronics

Datasheet
Download NTE593 Datasheet




 NTE593
NTE593
Silicon Diode, High Speed Switch
Description:
The NTE593 is a silicon epitaxial high–speed diode in an SOT–23 type surface mount package. This
device is intended for high–speed switching in hybrid thick–film circuits.
Absolute Maximum Ratings:
Continuous Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V
Repetitive Peak Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85V
Non–Repetitive Peak Forward Current (t = 1s), IFSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Average Rectified Forward Current (Average over any 20ms period, Note 1), IF(Av) . . . . . . 250mA
DC Forward Current (TA +25°C, Note 2), IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA
Repetitive Peak Forward Current, IFRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA
Total Power Dissipation (TA +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Ambient (Note 2), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . 430K/W
Note 1. Measured under pulse conditions: tp 0.5ms, IF(AV) = 150mA, t(av) 1ms, for sinusoidal
operation.
Note 2. Mounted on a ceramic substrate of .314 (8mm) x .393 (10mm) x .027 (0.7mm).
Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Forward Voltage
VF IF = 1mA
– – 715 mV
IF = 10mA
– – 855 mV
IF = 50mA
– – 1000 mV
Reverse Current
IF = 150mA
IR VR = 75V
VR = 75V, TJ = +150°C
– 1250 mV
– 1 µA
– 50 µA
Diode Capacitance
Cd VR = 0, f = 1MHz
– – 2 pF
Reverse Recovery Time
(When switched from
IF = 30mA to IR = 30mA
Recovery Charge
(When switched from
IF = 10mA to VR = 5V
trr measured at IR = 1mA,
RL = 100
Qs RL = 100
– 6 ns
– 45 pC




 NTE593
.016 (0.48)
K .098
(2.5)
A
N.C.
Max
.074 (1.9)
.118 (3.0) Max
.037 (0.95)
.043 (1.1)
.051
(1.3)
.007 (0.2)








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