NTE594

NTE594 Silicon Diode, Bandswitch Description: The NTE594 is a silicon band switching diode in an SOT–23 type surface mount package intended for thick and thin–film circuits. Absolute Maximum Ratings: Continuous Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V DC Forward Current, IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Total Power Dissipation (TA ≤ +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 430K/W Electrical Characteristics: (TJ = +25°C unless otherwise specified) Parameter Forward Voltage Reverse Current Series Resistance Diode Capacitance Symbol VF IR rD Cd Test Conditions IF = 100mA VR = 20V VR = 20V, TJ = 60°C IF = 5mA VR = 20V, f = 1MHz Min – – – – – Typ – – – 0.5 0.8 Max 1.2 100 1 0.7 1.0 Unit V nA µA Ω pF .016 (0.48) K A N.C. .098 (2.5) Max .037 (0.95) .074 (1.9) .118 (3.0) Max .051 (1.3) .043 (1.1) .007 (0.2) ...