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High Speed. NTE595 Datasheet

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High Speed. NTE595 Datasheet
















NTE595 Speed. Datasheet pdf. Equivalent













Part

NTE595

Description

Silicon Diode / Dual / Common Cathode / High Speed



Feature


NTE595 Silicon Diode, Dual, Common Catho de, High Speed Description: The NTE595 consists of two silicon diodes in an SO T–23 type surface mount package. The cathodes are common and the device is i ntended for high–speed switching appl ications in thick and thin–film circu its. Absolute Maximum Ratings: Continuo us Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . .
Manufacture

NTE Electronics

Datasheet
Download NTE595 Datasheet


NTE Electronics NTE595

NTE595; . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V Repetitiv e Peak Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V Non–Repetitive Peak Forward Current (Per device, t = 1s), IFSM . . . . . . . . . . . . . . . . . . . . . . . 500mA Average Rectified Forward Cur rent (Average over a.


NTE Electronics NTE595

ny 20ms period, Note 1), IF(Av) . . . . . . 250mA DC Forward Current, IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA R epetitive Peak Forward Current, IFRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA Total Power Dissipation (TA ≤ +25°C), Pto.


NTE Electronics NTE595

t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW Operating Junction Tempera ture, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C Storag e Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C Thermal Res.





Part

NTE595

Description

Silicon Diode / Dual / Common Cathode / High Speed



Feature


NTE595 Silicon Diode, Dual, Common Catho de, High Speed Description: The NTE595 consists of two silicon diodes in an SO T–23 type surface mount package. The cathodes are common and the device is i ntended for high–speed switching appl ications in thick and thin–film circu its. Absolute Maximum Ratings: Continuo us Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . .
Manufacture

NTE Electronics

Datasheet
Download NTE595 Datasheet




 NTE595
NTE595
Silicon Diode, Dual, Common Cathode,
High Speed
Description:
The NTE595 consists of two silicon diodes in an SOT–23 type surface mount package. The cathodes
are common and the device is intended for high–speed switching applications in thick and thin–film
circuits.
Absolute Maximum Ratings:
Continuous Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V
Repetitive Peak Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V
Non–Repetitive Peak Forward Current (Per device, t = 1s), IFSM . . . . . . . . . . . . . . . . . . . . . . . 500mA
Average Rectified Forward Current (Average over any 20ms period, Note 1), IF(Av) . . . . . . 250mA
DC Forward Current, IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA
Repetitive Peak Forward Current, IFRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA
Total Power Dissipation (TA +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C
Thermal Resistance, Junction–to–Ambient (Note 2), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . 430K/W
Note 1. Measured under pulse conditions: tp 0.5ms, IF(AV) = 150mA, t(av) 1ms, for sinusoidal
operation.
Note 2. Mounted on a ceramic substrate of .314 (8mm) x .393 (10mm) x .027 (0.7mm).
Electrical Characteristics (Per Diode): (TJ = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ
Forward Voltage
Reverse Current
Diode Capacitance
Forward Recovery Voltage
(When switched to IF = 10mA)
VF IF = 1mA
IF = 10mA
IF = 50mA
IF = 150mA
IR VR = 70V
VR = 70V, TJ = +150°C
Cd VR = 0, f = 1MHz
Vfr tr = 20ns
Max Unit
715 mV
855 mV
1000 mV
1250 mV
5 µA
100 µA
1.5 pF
1.75 V




 NTE595
Electrical Characteristics (Per Diode): (TJ = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ
Reverse Recovery Time
(When switched from
IF = 10mA to IR = 10mA
Recovery Charge
(When switched from
IF = 10mA to VR = 5V
trr measured at IR = 1mA,
RL = 100
Qs RL = 100
Max Unit
6 ns
45 pC
.016 (0.48)
K .098
(2.5)
A A Max
.074 (1.9)
.118 (3.0) Max
.037 (0.95)
.043 (1.1)
.051
(1.3)
.007 (0.2)








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