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40 Amp. NTE6033 Datasheet

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40 Amp. NTE6033 Datasheet
















NTE6033 Amp. Datasheet pdf. Equivalent













Part

NTE6033

Description

Silicon Power Rectifier Diode / 40 Amp



Feature


NTE6032 & NTE6033 Silicon Power Rectifie r Diode, 40 Amp Features: D Fast Recove ry Time D Low Stored Charge D Available in Cathode–to–Case (NTE6032) or An ode–to–Case (NTE6033) Style Ratings and Characteristics: Average Forward C urrent (TC = +75°C Max), IF(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A Maximu m Repetitive Peak Reverse V.
Manufacture

NTE Electronics

Datasheet
Download NTE6033 Datasheet


NTE Electronics NTE6033

NTE6033; oltage (TJ = –40° to +125°C), VRRM . . . . . . . . . . . . . . . . 1000V Ma ximum Non–Repetitive Peak Reverse Vol tage (TJ = +25° to +125°C, tp ≤ 5ms ), VRSM . . 1250V Maximum Reverse Curre nt (At Rated VR), IR TJ = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.1mA TJ = +125°C . . . .


NTE Electronics NTE6033

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA Maximum Forward Surge Current, IFS M 50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700A 60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


NTE Electronics NTE6033

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 730A Fusing Current, I2t 50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2450A2s 60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..





Part

NTE6033

Description

Silicon Power Rectifier Diode / 40 Amp



Feature


NTE6032 & NTE6033 Silicon Power Rectifie r Diode, 40 Amp Features: D Fast Recove ry Time D Low Stored Charge D Available in Cathode–to–Case (NTE6032) or An ode–to–Case (NTE6033) Style Ratings and Characteristics: Average Forward C urrent (TC = +75°C Max), IF(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A Maximu m Repetitive Peak Reverse V.
Manufacture

NTE Electronics

Datasheet
Download NTE6033 Datasheet




 NTE6033
NTE6032 & NTE6033
Silicon Power Rectifier Diode, 40 Amp
Features:
D Fast Recovery Time
D Low Stored Charge
D Available in Cathode–to–Case (NTE6032) or Anode–to–Case (NTE6033) Style
Ratings and Characteristics:
Average Forward Current (TC = +75°C Max), IF(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A
Maximum Repetitive Peak Reverse Voltage (TJ = –40° to +125°C), VRRM . . . . . . . . . . . . . . . . 1000V
Maximum Non–Repetitive Peak Reverse Voltage (TJ = +25° to +125°C, tp 5ms), VRSM . . 1250V
Maximum Reverse Current (At Rated VR), IR
TJ = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.1mA
TJ = +125°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
Maximum Forward Surge Current, IFSM
50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700A
60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 730A
Fusing Current, I2t
50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2450A2s
60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2200A2s
Fusing Current, I2pt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34500A2ps
Operating Junction Temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +125°C
Storage Temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Thermal Resistance, Junction–to–Case (DC Operation), RthJC . . . . . . . . . . . . . . . . . . . . . . . 0.6°C/W
Thermal Resistance, Case–to–Sink (Surface flat, smooth, and greased), RthCS . . . . . . . . 0.25°C/W
Maximum Mounting Torque (Non–lubricated threads), T . . . . . . . . . . . . . . . . . . . 30 (3.3) inlb (mN)




 NTE6033
Electrical Specifications:
Parameter
Symbol
Test Conditions
Rating Unit
Maximum Average Forward Current
Maximum Peak OneCycle
NonRepetitive Surge Current
IF (AV)
IFSM
180° sinusoidal condition, TC = +75°C Max
t = 10ms Half sinewave current, rated VRRM
t = 8.3ms reapplied, initial TJ = +125°C
40
400
420
A
A
A
Maximum I2t for Fusing
Maximum I2t for Individual Device
Fusing
Maximum I2pt
I2t
I2pt
t = 10ms Half sinewave current, no voltage
t = 8.3ms reapplied, initial TJ = +125°C
475
500
t = 10ms Rated VRRM reapplied, initial
t = 8.3ms TJ = +125°C
800
730
t = 10ms No voltage reapplied, initial
t = 8.3ms TJ = +125°C
1150
1050
t = 0.1 to 10ms, no voltage reapplied, Note 1
11500
A
A
A2s
A2s
A2s
A2s
A2pt
Maximum Peak Forward Voltage
Maximum Reverse Recovery Time
Maximum Reverse Recovery Charge
VFM
trr
QRR
TJ = +25°C, IFM = 125A
TJ = +25°C, IF = 1A to VR = 30V, dIF/dt = 100A/µs
TJ = +25°C, IF = 125A, dIF/dt = 25A/µs
TJ = +25°C, IF = 1A to VR = 30V, dIF/dt = 100A/µs
TJ = +25°C, IF = 125A, dIF/dt = 25A/µs
1.95
350
1000
3100
6000
V
ns
ns
nC
nC
Note 1. I2t for time tx = I2pt ptx.
1.289
(32.7)
Max
.450
(11.4)
Max
.453
(11.5)
Max
.687
(17.4)
Max
.667 (16.9) Dia Max
.375 (9.55) Max
.140 (3.65) Dia Max
.450 (11.4) Max
1/428 UNF2A








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