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NTE6084 Dataheets PDF



Part Number NTE6084
Manufacturers NTE Electronics
Logo NTE Electronics
Description Silicon Rectifier Schottky Barrier
Datasheet NTE6084 DatasheetNTE6084 Datasheet (PDF)

NTE6084 Silicon Rectifier Schottky Barrier Description: The NTE6084 is a silicon power rectifier in a DO4 type package designed using the Schottky Barrier principle with a platinum barrier metal. Features: D Guardring for Stress Protection D Low Forward Voltage D +150°C Operating Junction Temperature Capability D Guaranteed Reverse Avalanche Absolute Maximum Ratings: Peak Repetitive Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

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NTE6084 Silicon Rectifier Schottky Barrier Description: The NTE6084 is a silicon power rectifier in a DO4 type package designed using the Schottky Barrier principle with a platinum barrier metal. Features: D Guardring for Stress Protection D Low Forward Voltage D +150°C Operating Junction Temperature Capability D Guaranteed Reverse Avalanche Absolute Maximum Ratings: Peak Repetitive Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V Working Peak Reverse Voltage, VRWM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V DC Blocking Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V Average Rectified Forward Current (VR = 45V, TC = +105°C), IO . . . . . . . . . . . . . . . . . . . . . . . . . . 30A Non–Repetitive Peak Surge Current, IFSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60Hz) . . . . . . . . . . 600A Peak Repetitive Reverse Surge Current (2.0µs, 1.0kHz), IRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Voltage Rate of Change (VR = 45V), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V/µs Peak Operating Junction Temperature (Forward Current Applied), TJ(pk) . . . . . . . . . . . . . . . . +150°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Maximum Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0°C/W Electrical Characteristics: Parameter Maximum Instantaneous Forward Voltage Maximum Instantaneous Reverse Current Capacitance Symbol vF iR Ct Test Conditions iF = 30A, TC = +125°C, Note 1 VR = 35V, TC = +125°C, Note 1 VR = 5V, 100kHz ≤ f ≤ 1MHz Min Typ Max Unit – – – – – – 0.55 125 2000 V mA pF Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2%. .437 (11.1) Max .250 (6.35) Max .060 (1.52) Dia Min .175 (4.45) Max 10–32 NF–2A .424 (10.8) Dia Max .405 (10.3) Max 1.250 (31.75) Max .453 (11.5) Max .


NTE6083 NTE6084 NTE6086


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