NTE6093

NTE6093 Silicon Rectifier Dual, Schottky Barrier Description: The NTE6093 is a silicon rectifier in a TO3P type package designed using the Schottky Barrier principle with a Molybenum barrier metal. Features: D Low Forward Voltage D Guard–Ring for Stress Protection D Low Power Loss & High Efficiency D Guarantee Reverse Avalanche D +125°C Operating Junction Temperature D High Surge Capacity D Low Storied Charge majority Carrier Conduction D Low Switching Noise Absolute Maximum Ratings: Peak Repetitive Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Working Peak Reverse Voltage, VRWM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V DC Blocking Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V RMS Reverse Voltage, VR(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42V Average Rectifier Forward Current (VR = 60V, TC = +125°C), IF(AV) Per Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A Total Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60A Peak Repetitive Forward Current (VR = 60V, Square Wave, TC = +125°C), IFM . . . . . . . . ...