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Unijunction Transistor. NTE6400 Datasheet

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Unijunction Transistor. NTE6400 Datasheet
















NTE6400 Transistor. Datasheet pdf. Equivalent













Part

NTE6400

Description

Unijunction Transistor



Feature


NTE6400 & NTE6400A Unijunction Transisto r Description: The NTE6400 & NTE6400A S ilicon Unijunction Transistors are thre e terminal devices having a stable “N ” type negative resistance characteri stic over a wide temperature range. A s table peak point voltage, a low peak po int current, and a high pulse pulse cur rent make these devices useful in oscil lators, timing circuit.
Manufacture

NTE Electronics

Datasheet
Download NTE6400 Datasheet


NTE Electronics NTE6400

NTE6400; s, trigger circuits, and pulse generator s where they can serve the purpose of t wo conventional silicon or germanium tr ansistors. These devices are intended f or applications where circuit economy i s of primary importance. Absolute Maxim um Ratings: (TA = +25°C unless otherwi se specified) RMS Power Dissipation, PD Unstabilized . . . . . . . . . . . . . . . . . . . . . . .


NTE Electronics NTE6400

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450mW Stabilized . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mW Dera te Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3. 9mW/°C RMS Emitter .


NTE Electronics NTE6400

Current, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Peak Emitter Current ( TJ = +150°C), IE(peak) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Em itter Reverse Voltage (TJ = +150°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..





Part

NTE6400

Description

Unijunction Transistor



Feature


NTE6400 & NTE6400A Unijunction Transisto r Description: The NTE6400 & NTE6400A S ilicon Unijunction Transistors are thre e terminal devices having a stable “N ” type negative resistance characteri stic over a wide temperature range. A s table peak point voltage, a low peak po int current, and a high pulse pulse cur rent make these devices useful in oscil lators, timing circuit.
Manufacture

NTE Electronics

Datasheet
Download NTE6400 Datasheet




 NTE6400
NTE6400 & NTE6400A
Unijunction Transistor
Description:
The NTE6400 & NTE6400A Silicon Unijunction Transistors are three terminal devices having a stable
“N” type negative resistance characteristic over a wide temperature range. A stable peak point volt-
age, a low peak point current, and a high pulse pulse current make these devices useful in oscillators,
timing circuits, trigger circuits, and pulse generators where they can serve the purpose of two conven-
tional silicon or germanium transistors.
These devices are intended for applications where circuit economy is of primary importance.
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
RMS Power Dissipation, PD
Unstabilized . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450mW
Stabilized . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.9mW/°C
RMS Emitter Current, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Peak Emitter Current (TJ = +150°C), IE(peak) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Emitter Reverse Voltage (TJ = +150°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Interbase Voltage, VBB
NTE6400 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V
NTE6400A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55V
Operating Temperature Range, Topr
Unstabilized . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +140°C
Stabilized . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.16°C/mW
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Intrinsic Standoff Ratio
NTE6400
NTE6400A
η VBB = 10V, Note 1
0.4 – 0.80
54 – 0.67
Interbase Resistance
RBBO VBB = 3V, IE = 0, Note 1
4 – 12 k
Modulated Interbase Current
Emitter Reverse Current
NTE6400
NTE6400A
IB2(MOD) VBB = 10V, IE = 50mA
IEO VB2E = 30V, IB1 = 0
6.8 – 30 mA
µA
– – 12
––1
Peak Point Emitter Current
Valley Point Current
Base–One Peak Pulse Voltage
IP
IV
VOB1
VBB = 25V
VBB = 20V, RB2 = 100
– – 25 µA
8 – – mA
3––V




 NTE6400
Note 1. The intristic standoff ratio, η, is essentially constant with temperature and interbase volt-
age. It is defined by the following equation:
Where
200
VP = η VBB + Tj
VP = Peak point emitter voltage
VBB = Interbase voltage
Tj = Junction Temperature (Degrees Kelvin)
Note 2. The interbase resistance is nearly ohmic and increases with temperature in a welldefined
manner. The temperature coefficient at +25°C is approximately 0.8%/°C.
.260 (6.6)
Max
.500 (12.7)
Min
.370 (9.39) Dia Max
.355 (9.03) Dia Max
.018 (0.45) Dia
.210 (5.33) Dia Max
B2 B1
45°
.031 (.793)
Emitter








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