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Speed Switch. NTE66 Datasheet

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Speed Switch. NTE66 Datasheet
















NTE66 Switch. Datasheet pdf. Equivalent













Part

NTE66

Description

MOSFET N-Ch / Enhancement Mode High Speed Switch



Feature


NTE66 MOSFET N–Ch, Enhancement Mode Hi gh Speed Switch Description: The NTE66 is a TMOS Power FET in a TO220 type pac kage designed for high voltage, high sp eed power switching applications such a s switching regulators, converters, sol enoid and relay drivers. Features: D Lo wer RDS(ON) D Improved Inductive Rugged ness D Fast Switching Times D Lower Inp ut Capacitance D Ext.
Manufacture

NTE Electronics

Datasheet
Download NTE66 Datasheet


NTE Electronics NTE66

NTE66; ended Safe Operating Area D Improved Hig h Temperature Reliability Absolute Maxi mum Ratings: Drain–Source Voltage (TJ = +25°C to +150°C), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Drain–Gate Vol tage (RGS = 1MΩ, TJ = +25°C to +125 C), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . 100V Gate–Source Voltage, VGS . . . . . . . . .


NTE Electronics NTE66

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V Continuous Dra in Current, ID TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..


NTE Electronics NTE66

. . . . . . . . . . . . . . . . . . . . . . . . . 10A Pulsed Drain Current (No te 2), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56A Pulsed Gate Current, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±1.5A Single P ulsed Avalanche Ene.





Part

NTE66

Description

MOSFET N-Ch / Enhancement Mode High Speed Switch



Feature


NTE66 MOSFET N–Ch, Enhancement Mode Hi gh Speed Switch Description: The NTE66 is a TMOS Power FET in a TO220 type pac kage designed for high voltage, high sp eed power switching applications such a s switching regulators, converters, sol enoid and relay drivers. Features: D Lo wer RDS(ON) D Improved Inductive Rugged ness D Fast Switching Times D Lower Inp ut Capacitance D Ext.
Manufacture

NTE Electronics

Datasheet
Download NTE66 Datasheet




 NTE66
NTE66
MOSFET
N–Ch, Enhancement Mode
High Speed Switch
Description:
The NTE66 is a TMOS Power FET in a TO220 type package designed for high voltage, high speed
power switching applications such as switching regulators, converters, solenoid and relay drivers.
Features:
D Lower RDS(ON)
D Improved Inductive Ruggedness
D Fast Switching Times
D Lower Input Capacitance
D Extended Safe Operating Area
D Improved High Temperature Reliability
Absolute Maximum Ratings:
Drain–Source Voltage (TJ = +25°C to +150°C), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Drain–Gate Voltage (RGS = 1M, TJ = +25°C to +125°C), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V
Continuous Drain Current, ID
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A
TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Pulsed Drain Current (Note 2), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56A
Pulsed Gate Current, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±1.5A
Single Pulsed Avalanche Energy (Note 3), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69mJ
Avalanche Current, IAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.62W/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Lead Temperature (During Soldering, 1/8” from case, 5sec max.), TL . . . . . . . . . . . . . . . . . . . +300°C
Thermal Resistance, Junction–to–Case, RΘJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.62K/W
Thermal Resistance, Junction–to–Ambient, RΘJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80K/W
Thermal Resistance, Case–to–Sink (Mounting surface flat, smooth, and greased), RΘCS . 0.5K/W
Note 1. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.
Note 2. Repetitive rating: Pulse width limited by max, junction temperature.
Note 3. L = 0.53mH, Vdd = 25V, RG = 25, Starting TJ = +25°C.




 NTE66
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
DrainSource Breakdown Voltage BVDSS VGS = 0V, ID = 250µA
100 – –
Gate Threshold Voltage
VGS(th) VDS = VGS, ID = 250µA
2.0 4.0
GateSource Leakage, Forward IGSS VGS = 20V
– – 100
GateSource Leakage, Reverse IGSS VGS = 20V
– – –100
Zero Gate Voltage Drain Current IDSS VDS = Max. Rating, VGS = 0V
– – 250
VDS = Max. Rating x 0.8, VGS = 0V,
TC = +125°C
– – 1000
OnState DrainSource Current ID(on) VDS > ID(on) x RDS(on)max, VGS = 10V, Note 1 14
Static DrainSource OnState
Resistance
RDS(on) VGS = 10V, ID = 8.3A, Note 1
0.10 0.16
V
V
nA
nA
µA
µA
A
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
Total Gate Charge
(GateSource Plus GateDrain)
GateSource Charge
GateDrain (Miller) Charge
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDS 50V, ID = 8.3A, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
VDD = 0.5BVDSS, ID = 8.3A, ZO = 12
(MOSFET switching times are essentially
independent of operating temperature)
VGS = 10V, ID = 14A, VDS = 0.8 Max. Rating
(Gate charge is essentially independent of
operating temperature)
5.1 7.6
640
240
72
10
34
23
24
17
3.7
7
mhos
pF
pF
pF
15 ns
51 ns
35 ns
36 ns
26 nC
5.5 nC
11 nC
Note 1. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.
SourceDrain Diode Ratings and Characteristics:
Parameter
Symbol
Test Conditions
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
IS
ISM Note 2
VSD TC = +25°C, IS = 14A, VGS = 0V
trr TJ = +25°C, IF = 14A, dIF/dt = 100A/µs
Min Typ Max Unit
– – 14 A
– – 56 A
– – 2.5 V
120 250 ns
Note 1. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.
Note 2. Repetitive rating: Pulse width limited by max, junction temperature.




 NTE66
.420 (10.67)
Max
.147 (3.75) Dia Max
.110 (2.79)
.500
(12.7)
Max
.070 (1.78) Max
Gate
.100 (2.54)
.250 (6.35)
Max
.500
(12.7)
Min
Source
Drain/Tab




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