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NTE6664 Datasheet, Equivalent, Dynamic RAM.Integrated Circuit 64K-Bit Dynamic RAM Integrated Circuit 64K-Bit Dynamic RAM |
| Part | NTE6664 |
|---|---|
| Description | Integrated Circuit 64K-Bit Dynamic RAM |
| Feature | NTE6664 Integrated Circuit 64K–Bit Dyn amic RAM
Description: The NTE6664 is a 65,536 Bit, high–speed, dynamic Rando m Access Memory. Organized as 65,536 on e–bit words and fabricated using HMOS high–performance N–Channel silicon –gate technology, this 5V only dynami c RAM combines high performance with lo w cost and improved reliability. By mul tiplying row– and column– address i nputs, the NTE6664 requires only eight address lines and permits packaging in a standard 16–Lead DIP package. Compl ete address decoding is done on chip wi th address latches incorporated. Data o ut is controlled by CAS allowing . |
| Manufacture | NTE Electronics |
| Datasheet |
| Part | NTE6664 |
|---|---|
| Description | Integrated Circuit 64K-Bit Dynamic RAM |
| Feature | NTE6664 Integrated Circuit 64K–Bit Dyn amic RAM
Description: The NTE6664 is a 65,536 Bit, high–speed, dynamic Rando m Access Memory. Organized as 65,536 on e–bit words and fabricated using HMOS high–performance N–Channel silicon –gate technology, this 5V only dynami c RAM combines high performance with lo w cost and improved reliability. By mul tiplying row– and column– address i nputs, the NTE6664 requires only eight address lines and permits packaging in a standard 16–Lead DIP package. Compl ete address decoding is done on chip wi th address latches incorporated. Data o ut is controlled by CAS allowing . |
| Manufacture | NTE Electronics |
| Datasheet |
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