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NTE6664 Datasheet, Equivalent, Dynamic RAM.

Integrated Circuit 64K-Bit Dynamic RAM

Integrated Circuit 64K-Bit Dynamic RAM

 

 

 

Part NTE6664
Description Integrated Circuit 64K-Bit Dynamic RAM
Feature NTE6664 Integrated Circuit 64K–Bit Dyn amic RAM Description: The NTE6664 is a 65,536 Bit, high–speed, dynamic Rando m Access Memory.
Organized as 65,536 on e–bit words and fabricated using HMOS high–performance N–Channel silicon –gate technology, this 5V only dynami c RAM combines high performance with lo w cost and improved reliability.
By mul tiplying row– and column– address i nputs, the NTE6664 requires only eight address lines and permits packaging in a standard 16–Lead DIP package.
Compl ete address decoding is done on chip wi th address latches incorporated.
Data o ut is controlled by CAS allowing .
Manufacture NTE Electronics
Datasheet
Download NTE6664 Datasheet
Part NTE6664
Description Integrated Circuit 64K-Bit Dynamic RAM
Feature NTE6664 Integrated Circuit 64K–Bit Dyn amic RAM Description: The NTE6664 is a 65,536 Bit, high–speed, dynamic Rando m Access Memory.
Organized as 65,536 on e–bit words and fabricated using HMOS high–performance N–Channel silicon –gate technology, this 5V only dynami c RAM combines high performance with lo w cost and improved reliability.
By mul tiplying row– and column– address i nputs, the NTE6664 requires only eight address lines and permits packaging in a standard 16–Lead DIP package.
Compl ete address decoding is done on chip wi th address latches incorporated.
Data o ut is controlled by CAS allowing .
Manufacture NTE Electronics
Datasheet
Download NTE6664 Datasheet

NTE6664

NTE6664
NTE6664

NTE6664

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