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Speed Switch. NTE67 Datasheet

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Speed Switch. NTE67 Datasheet






NTE67 Switch. Datasheet pdf. Equivalent




NTE67 Switch. Datasheet pdf. Equivalent





Part

NTE67

Description

MOSFET N-Ch / Enhancement Mode High Speed Switch



Feature


NTE67 MOSFET N–Ch, Enhancement Mode Hi gh Speed Switch Description: The NTE67 is a TMOS Power FET in a TO220 type pac kage designed for high voltage, high sp eed power switching applications such a s switching regulators, converters, sol enoid and relay drivers. Features: D Lo wer RDS(ON) D Improved Inductive Rugged ness D Fast Switching Times D Lower Inp ut Capacitance D Ext.
Manufacture

NTE Electronics

Datasheet
Download NTE67 Datasheet


NTE Electronics NTE67

NTE67; ended Safe Operating Area D Improved Hig h Temperature Reliability Absolute Maxi mum Ratings: Drain–Source Voltage (TJ = +25°C to +150°C), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Drain–Gate Vol tage (RGS = 1MΩ, TJ = +25°C to +125 C), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . 400V Gate–Source Voltage, VGS . . . . . . . . .


NTE Electronics NTE67

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V Continuous Dra in Current, ID TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5A TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


NTE Electronics NTE67

. . . . . . . . . . . . . . . . . . . . . . . . 3.0A Pulsed Drain Current (Note 2), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18A Pu lsed Gate Current, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±1.5A Single Pul sed Avalanche Energ.

Part

NTE67

Description

MOSFET N-Ch / Enhancement Mode High Speed Switch



Feature


NTE67 MOSFET N–Ch, Enhancement Mode Hi gh Speed Switch Description: The NTE67 is a TMOS Power FET in a TO220 type pac kage designed for high voltage, high sp eed power switching applications such a s switching regulators, converters, sol enoid and relay drivers. Features: D Lo wer RDS(ON) D Improved Inductive Rugged ness D Fast Switching Times D Lower Inp ut Capacitance D Ext.
Manufacture

NTE Electronics

Datasheet
Download NTE67 Datasheet




 NTE67
NTE67
MOSFET
N–Ch, Enhancement Mode
High Speed Switch
Description:
The NTE67 is a TMOS Power FET in a TO220 type package designed for high voltage, high speed
power switching applications such as switching regulators, converters, solenoid and relay drivers.
Features:
D Lower RDS(ON)
D Improved Inductive Ruggedness
D Fast Switching Times
D Lower Input Capacitance
D Extended Safe Operating Area
D Improved High Temperature Reliability
Absolute Maximum Ratings:
Drain–Source Voltage (TJ = +25°C to +150°C), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Drain–Gate Voltage (RGS = 1M, TJ = +25°C to +125°C), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V
Continuous Drain Current, ID
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5A
TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0A
Pulsed Drain Current (Note 2), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18A
Pulsed Gate Current, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±1.5A
Single Pulsed Avalanche Energy (Note 3), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 290mJ
Avalanche Current, IAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5A
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6W/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Lead Temperature (During Soldering, 1/8” from case, 5sec max.), TL . . . . . . . . . . . . . . . . . . . +300°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67K/W
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80K/W
Thermal Resistance, Case–to–Sink (Mounting surface flat, smooth, and greased), RthCS 0.24K/W
Note 1. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.
Note 2. Repetitive rating: Pulse width limited by max, junction temperature.
Note 3. L = 17mH, Vdd = 50V, RG = 25, Starting TJ = +25°C.




 NTE67
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
DrainSource Breakdown Voltage
Gate Threshold Voltage
GateSource Leakage, Forward
GateSource Leakage, Reverse
Zero Gate Voltage Drain Current
OnState DrainSource Current
Static DrainSource OnState
Resistance
BVDSS VGS = 0V, ID = 250µA
VGS(th) VDS = VGS, ID = 250µA
IGSS VGS = 20V
IGSS VGS = 20V
IDSS VDS = Max. Rating, VGS = 0V
VDS = Max. Rating x 0.8, VGS = 0V,
TC = +125°C
ID(on) VDS > ID(on) x RDS(on)max, VGS = 10V, Note 1
RDS(on) VGS = 10V, ID = 3A, Note 1
400
2.0
4.5
––
4.0
100
– –100
250
1000
––
1.0 1.5
V
V
nA
nA
µA
µA
A
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
Total Gate Charge
(GateSource Plus GateDrain)
GateSource Charge
GateDrain (Miller) Charge
gfs VDS 50V, ID = 3A, Note 1
2.9 4.4
Ciss VGS = 0V, VDS = 25V, f = 1MHz
780
Coss
99
Crss
43
td(on)
tr
td(off)
VDD = 0.5BVDSS, ID = 5.5A, ZO = 12
(MOSFET switching times are essentially
independent of operating temperature)
11
19
37
tf 16
Qg VGS = 10V, ID = 5.5A, VDS = 0.8 Max. Rating
(Gate charge is essentially independent of
Qgs operating temperature)
18
40
Qgd 14
mhos
pF
pF
pF
17 ns
29 ns
56 ns
24 ns
30 nC
nC
nC
Note 1. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.
SourceDrain Diode Ratings and Characteristics:
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
IS – – 4.5 A
ISM Note 2
– – 18 A
VSD TC = +25°C, IS = 4.5A, VGS = 0V
– – 1.6 V
trr TJ = +25°C, IF = 5.5A, dIF/dt = 100A/µs 310 660 ns
Note 1. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.
Note 2. Repetitive rating: Pulse width limited by max, junction temperature.




 NTE67
.420 (10.67)
Max
.147 (3.75) Dia Max
.110 (2.79)
.500
(12.7)
Max
.070 (1.78) Max
Gate
.100 (2.54)
.250 (6.35)
Max
.500
(12.7)
Min
Source
Drain/Tab



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