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Purpose Amplifier. NTE85 Datasheet

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Purpose Amplifier. NTE85 Datasheet
















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Part

NTE85

Description

Silicon NPN Transistor General Purpose Amplifier



Feature


NTE85 Silicon NPN Transistor General Pur pose Amplifier Applications: D Medium P ower Amplifiers D Class B Audio Outputs D Hi–Fi Drivers Absolute Maximum Rat ings: (TA = +25°C unless otherwise spe cified) Collector–Emitter Voltage, VC EO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Co llector–Base Voltage, V.
Manufacture

NTE Electronics

Datasheet
Download NTE85 Datasheet


NTE Electronics NTE85

NTE85; CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuo us Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..


NTE Electronics NTE85

. . . . . . . . . . . . . 500mA Total D evice Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0mW/°C Operating Ju nction Temperature Range, TJ . . . . . . . . . . . . . . . ..


NTE Electronics NTE85

. . . . . . . . . . . . . . . . . . – 55° to +150°C Storage Temperature Ran ge, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Therm al Resistance, Junction–to–Case, Rt hJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83 .3°C/W Thermal Resistance, Junction– to–Ambient, RthJA . . . . . . . ..





Part

NTE85

Description

Silicon NPN Transistor General Purpose Amplifier



Feature


NTE85 Silicon NPN Transistor General Pur pose Amplifier Applications: D Medium P ower Amplifiers D Class B Audio Outputs D Hi–Fi Drivers Absolute Maximum Rat ings: (TA = +25°C unless otherwise spe cified) Collector–Emitter Voltage, VC EO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Co llector–Base Voltage, V.
Manufacture

NTE Electronics

Datasheet
Download NTE85 Datasheet




 NTE85
NTE85
Silicon NPN Transistor
General Purpose Amplifier
Applications:
D Medium Power Amplifiers
D Class B Audio Outputs
D Hi–Fi Drivers
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3°C/W
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200°C/W
Note 1. These ratings are limiting values above which the serviceability of any semiconductor may
be impaired.
Note 2. These ratings are based on a maximum junction temperature of 150°C.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector–Emitter Breakdown
Voltage
V(BR)CEO IC = 10mA, IB = 0, Note 3
Collector–Base Breakdown Voltage V(BR)CBO IC = 100µA, IE = 0
Emitter–Base Breakdown Voltage V(BR)EBO IE = 100µA, IC = 0
Collector Cutoff Voltage
Emitter Cutoff Current
ICBO
IEBO
VCB = 20V, IE = 0
VBE = 3V, IC = 0
Note 3. Pulse Test: Pulse Width 300µs, Duty Cycle 2%
Min Typ Max Unit
30 – – V
50 – – V
5.0 – – V
– – 100 nA
– – 100 nA




 NTE85
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
DC Current Gain
BaseEmitter ON Voltage
hFE VCE = 2V, IC = 50mA, Note 3 100 300
VBE(on) IC = 100mA, VCE = 2V,
Note 3
0.5 1.0 V
CollectorEmitter Saturation Voltage VCE(sat) IC = 100mA, IB = 5mA,
Note 3
– – 0.6 V
Current GainBandwidth Product
CollectorBase Capacitance
fT IC = 50mA, VCE = 2V
100
Ccb VCB = 10V, IE = 0, f = 1MHz
MHz
12 pF
Note 3. Pulse Test: Pulse Width 300µs, Duty Cycle 2%
.210
(5.33)
Max
.500
(12.7)
Min
.135 (3.45) Min
Seating Plane
.021 (.445) Dia Max
.100 (2.54)
ECB
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
.205 (5.2) Max
.105 (2.67) Max








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