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Gain Amplifier. NTE90 Datasheet

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Gain Amplifier. NTE90 Datasheet
















NTE90 Amplifier. Datasheet pdf. Equivalent













Part

NTE90

Description

Silicon Complementary Transistors General Purpose High Gain Amplifier



Feature


NTE90 (NPN) & NTE91 (PNP) Silicon Comple mentary Transistors General Purpose Hig h Gain Amplifier Absolute Maximum Rati ngs: (TA = +25°C unless otherwise spec ified) Collector−Emitter Voltage, VCE O . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Coll ector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . ..
Manufacture

NTE Electronics

Datasheet
Download NTE90 Datasheet


NTE Electronics NTE90

NTE90; . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V E mitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


NTE Electronics NTE90

50mA Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750mW Operating Ju nction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..


NTE Electronics NTE90

. . . . . . . . . . . . . −55° to +1 50°C Electrical Characteristics: (TA = +25°C unless otherwise specified) P arameter Symbol Test Conditions Coll ector−Emitter Breakdown Voltage Colle ctor−Base Breakdown Voltage Collector Cutoff Current DC Current Gain Base− Emitter Voltage Collector−Emitter Sat uration Voltage Current Gain−Bandwidt h Product Collector Output Capaci.





Part

NTE90

Description

Silicon Complementary Transistors General Purpose High Gain Amplifier



Feature


NTE90 (NPN) & NTE91 (PNP) Silicon Comple mentary Transistors General Purpose Hig h Gain Amplifier Absolute Maximum Rati ngs: (TA = +25°C unless otherwise spec ified) Collector−Emitter Voltage, VCE O . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Coll ector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . ..
Manufacture

NTE Electronics

Datasheet
Download NTE90 Datasheet




 NTE90
NTE90 (NPN) & NTE91 (PNP)
Silicon Complementary Transistors
General Purpose High Gain Amplifier
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
CollectorEmitter Breakdown Voltage
CollectorBase Breakdown Voltage
Collector Cutoff Current
DC Current Gain
BaseEmitter Voltage
CollectorEmitter Saturation Voltage
Current GainBandwidth Product
Collector Output Capacitance
V(BR)CEO
V(BR)CBO
ICBO
hFE1
hFE2
VBE
VCE(sat)
fT
Cob
IC = 1mA, RBE =
IC = 10µA, IE = 0
VCB = 100V, IB = 0
VCE = 12V, IC = 2mA
VCE = 12V, IC = 10mA
VCE = 12V, IC = 2mA
IC = 10mA, IB = 1mA
VCE = 12V, IC = 5mA
VCB = 25V, IE = 0, f = 1MHz
Min Typ Max Unit
120 − − V
120 − − V
− − 0.5 µA
400 800
125 − −
− − 0.75 V
− − 0.2 V
350 MHz
1.6 pF




 NTE90
.339
(8.62)
Max
.512
(13.0)
Min
Seating Plane
.026 (.66)
Dia Max
ECB
.100 (2.54)
.240 (6.09) Max
.200
(5.08)
Max








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