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Transistor Pair. NTE912 Datasheet

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Transistor Pair. NTE912 Datasheet
















NTE912 Pair. Datasheet pdf. Equivalent













Part

NTE912

Description

Integrated Circuit General Purpose Transistor Array (Three Isolated Transistors and One Differentially-Connected Transistor Pair)



Feature


NTE912 Integrated Circuit General Purpos e Transistor Array (Three Isolated Tran sistors and One Differentially–Connec ted Transistor Pair) Description: The N TE912 consists of five general–purpos e silicon NPN transistors on a common m onolithic substrate in a 14–Lead DIP type package. Two of the transistors ar e internally connected to form a differ entially–connected pair..
Manufacture

NTE Electronics

Datasheet
Download NTE912 Datasheet


NTE Electronics NTE912

NTE912; The transistors of the NTE912 are well suited to a wide variety of application s in low power systems in the DC throug h VHF range. They may be used as discre te transistors in conventional circuits . However, in addition, they provide th e very significant inherent integrated circuit advantages of close electrical and thermal matching. Features: D Two M atched Pairs of Tr.


NTE Electronics NTE912

ansistors: VBE matched ±5mV Input Offse t Current 2µA Max. @ IC = 1mA D 5 Gene ral Purpose Monolithic Transistors D Op eration from DC to 120MHz D Wide Operat ing Current Range D Low Noise Figure: 3 .2dB Typ @ 1kHz Applications: D General Use In All Types of Signal Processing Systems Operating Anywhere in the Frequ ency Range from DC to VHF D Custom Desi gned Differential Am.


NTE Electronics NTE912

plifiers D Temperature Compensated Ampli fiers Absolute Maximum Ratings: (TA = + 25°C unless otherwise specified) Power Dissipation (TA ≤ +55°C), PD Each T ransistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Total Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..





Part

NTE912

Description

Integrated Circuit General Purpose Transistor Array (Three Isolated Transistors and One Differentially-Connected Transistor Pair)



Feature


NTE912 Integrated Circuit General Purpos e Transistor Array (Three Isolated Tran sistors and One Differentially–Connec ted Transistor Pair) Description: The N TE912 consists of five general–purpos e silicon NPN transistors on a common m onolithic substrate in a 14–Lead DIP type package. Two of the transistors ar e internally connected to form a differ entially–connected pair..
Manufacture

NTE Electronics

Datasheet
Download NTE912 Datasheet




 NTE912
NTE912
Integrated Circuit
General Purpose Transistor Array
(Three Isolated Transistors and One Differentially–Connected Transistor Pair)
Description:
The NTE912 consists of five general–purpose silicon NPN transistors on a common monolithic sub-
strate in a 14–Lead DIP type package. Two of the transistors are internally connected to form a differ-
entially–connected pair.
The transistors of the NTE912 are well suited to a wide variety of applications in low power systems
in the DC through VHF range. They may be used as discrete transistors in conventional circuits. How-
ever, in addition, they provide the very significant inherent integrated circuit advantages of close elec-
trical and thermal matching.
Features:
D Two Matched Pairs of Transistors:
VBE matched ±5mV
Input Offset Current 2µA Max. @ IC = 1mA
D 5 General Purpose Monolithic Transistors
D Operation from DC to 120MHz
D Wide Operating Current Range
D Low Noise Figure: 3.2dB Typ @ 1kHz
Applications:
D General Use In All Types of Signal Processing Systems Operating Anywhere in the Frequency
Range from DC to VHF
D Custom Designed Differential Amplifiers
D Temperature Compensated Amplifiers
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Power Dissipation (TA +55°C), PD
Each Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Total Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750mW
Derate Above 55°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.67mW/°C
Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V
Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Collector Substrate Voltage (Note 1), VCIO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Lead Temperature (During Soldering, 1/16” ±1/32” from case, 10sec max), TL . . . . . . . . . . . +265°C
Note 1. The collector of each transistor is isolated from the substrate by an integral diode. The sub-
strate (Pin13) must be connected to the most negative point in the external circuit to maintain
isolation between transistors and to provide for normal transistor action.




 NTE912
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Static Characteristics
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Collector Substrate Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Cutoff Current
Static Forward Current Transfer Ratio
Input Offset Current for Matched Pair
Q1 and Q2. |IIO1IIO2|
Base Emitter Voltage
Magnitude of Input Offset Voltage for
Differential Pair |VBE1 VBE2|
Magnitude of Input Offset Voltage for
Isolated Transistors |VBE3 VBE4|
|VBE4 VBE5| |VBE5 VBE3|
Temperature Coefficient of Base Emitter
Voltage
V(BR)CBO IC = 10µA, IE = 0
V(BR)CEO IC = 1mA, IB = 0
V(BR)CIO IC = 10µA, ICI = 0
V(BR)EBO IE = 10µA, IC = 0
ICBO VCB = 10V, IE = 0
ICEO VCE = 10V, IB = 0
hFE VCE = 3V
IC = 10mA
IC = 1mA
IC = 10µA
VCE = 3V, IC = 1mA
VBE VCE = 3V
IE = 1mA
IE = 10mA
VCE = 3V, IC = 1mA
VCE = 3V, IC = 1mA
VBE
T
VCE = 3V, IC = 1mA
Collector Emitter Saturation Voltage
Temperature Coefficient:
Magnitude of InputOffset Voltage
VCES
|VIO|
T
IB = 1mA, IC = 10mA
VCE = 3V, IC = 1mA
Min Typ Max Unit
20 60
15 24
20 60
57
0.002 40
– – 0.5
100
40 100
54
0.3 2.0
V
V
V
V
nA
µA
µA
0.715
0.800
0.45 5.0
V
V
mV
0.45 5.0 mV
– –1.9 mV/°C
0.23
V
1.1 µV/°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Dynamic Characteristics
LowFrequency Noise Figure
NF f = 1kHz, VCE = 3V, IC = 100µA, 3.25 dB
Source Resistance = 1k
LowFrequency, SmallSignal
Equivalent Circuit Characteristics:
Forward Current Transfer Ratio
ShortCircuit Input Impedance
OpenCircuit Output Impedance
OpenCircuit Reverse Voltage
Transfer Ratio
hfe f = 1kHz, VCE = 3V, IC = 1mA
hie
hoe
hre
110
3.5 k
15.6 µmhos
1.8x104
Admittance Characteristics:
Forward Transfer Admittance
Input Admittance
Yfe f = 1kHz, VCE = 3V, IC = 1mA
Yie
31j1.5
0.3+j0.04
Output Admittance
Yoe
0.001+j0.03




 NTE912
Electrical Characteristics (Contd): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ
Dynamic Characteristics (Contd)
GainBandwidth Product
Emitter Base Capacitance
Collector Base Capacitance
Collector Substrate Capacitance
fT VCE = 3V, IC = 3mA
CEB VEB = 3V, IE = 0
CCB VCB = 3V, IC = 0
CCI VCS = 3V, IC = 0
300 550
0.6
0.58
2.8
Max Unit
pF
pF
pF
Pin Connection Diagram
Q1 Vout 1
Q1 Vin 2
Q1/Q2 Vin 3
Q2 Bias 4
Q2 Vin 5
Q3 Vin 6
Q3 Vin 7
14 Q5 Vout
13 Substrate/Q5 Vin
12 Q5 Vin
11 Q4 Vout
10 Q4 Vin
9 Q4 Vin
8 Q3 Vout
14 8
17
.785 (19.95)
Max
.200 (5.08)
Max
.300
(7.62)
.100 (2.45)
.600 (15.24)
.099 (2.5) Min




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