Integrated Circuit General Purpose Transistor Array (Three Isolated Transistors and One Differentially-Connected Transistor Pair)
NTE912 Integrated Circuit General Purpose Transistor Array
(Three Isolated Transistors and One Differentially–Connected ...
NTE912 Integrated Circuit General Purpose
Transistor Array
(Three Isolated
Transistors and One Differentially–Connected
Transistor Pair) Description: The NTE912 consists of five general–purpose silicon
NPN transistors on a common monolithic substrate in a 14–Lead DIP type package. Two of the
transistors are internally connected to form a differentially–connected pair. The
transistors of the NTE912 are well suited to a wide variety of applications in low power systems in the DC through VHF range. They may be used as discrete
transistors in conventional circuits. However, in addition, they provide the very significant inherent integrated circuit advantages of close electrical and thermal matching. Features: D Two Matched Pairs of
Transistors: VBE matched ±5mV Input Offset Current 2µA Max. @ IC = 1mA D 5 General Purpose Monolithic
Transistors D Operation from DC to 120MHz D Wide Operating Current Range D Low Noise Figure: 3.2dB Typ @ 1kHz Applications: D General Use In All Types of Signal Processing Systems Operating Anywhere in the Frequency Range from DC to VHF D Custom Designed Differential Amplifiers D Temperature Compensated Amplifiers Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Power Dissipation (TA ≤ +55°C), PD Each
Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Total Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....
