NTE99 Silicon NPN Transistor Darlington w/Base–Emitter Speed–up Diode
Description: The NTE99 is a silicon NPN Darlington...
NTE99 Silicon
NPN Transistor Darlington w/Base–Emitter Speed–up Diode
Description: The NTE99 is a silicon
NPN Darlington
transistor in a TO3 type package designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. This device is particularly suited for line–operated switchmode applications. Applications: D Switching
Regulators D Motor Controls D Inverters D Solenoid and Relay Drivers Features: D Fast Turn–Off Times: 1.0µs (max) Inductive Crossover Time – 20 Amps 2.5µs (max) Inductive Storage Time – 20 Amps D Operating Temperature Range: –65° to +200°C Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Collector–Emitter Voltage, VCEV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75A Base Current, IB Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...