NTF5P03T3

NTF5P03T3 Preferred Device Power MOSFET 5.2 Amps, 30 Volts P–Channel SOT–223 Features Ultra Low RDS(on) Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature SOT–223 Surface Mount Package Avalanche Energy Specified http://onsemi.com 5.2 AMPERES 30 VOLTS RDS(on) = 100 mW P–Channel D Applications DC–DC Converters Power Management Motor Controls Inductive Loads Replaces MMFT5P03HD G S MARKING DIAGRAM 4 1 2 3 SOT–223 CASE 318E STYLE 3 AWW 5P03 A WW 5P03 = Assembly Location = Work Week = Device Code PIN ASSIGNMENT 4 Drain 1 2 3 Gate Drain Source ORDERING INFORMATION Device NTF5P03T3 Package SOT–223 Shipping 1000 Tape & Reel © Semiconductor Components Industries, LLC, 2002 1 May, 2002 – Rev. 1 Publication Order Number: NTF5P03T3/D NTF5P03T3 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Negative sign for P–Channel devices omitted for clarity Rating Drain–to–Source Voltage Drain–to–Gate Voltage (RGS = 1.0 MW) Gate–to–Source Voltage – Continuous 1″ SQ. FR–4 or G–10 PCB Thermal Resistance – Junction to Ambient Total Power Dissipation @ TA = 25°C Linear Derating Factor Drain Current – Continuous @ TA = 25°C Continuous @ TA = 70°C Pulsed Drain Current (Note 1) Thermal Resistance – Junction to Ambient Total Power Dissipation @ TA = 25°C Linear Derating Factor Drain Current – Continuous @ TA = 25°C Continuous @ TA = 70°C Pulsed Drain Current (Note 1) Symbol VDSS VDGR VGS RTHJA PD ID ID IDM RTHJA PD ID ID IDM TJ, Tstg ...