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Power MOSFET. NTF5P03T3 Datasheet

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Power MOSFET. NTF5P03T3 Datasheet
















NTF5P03T3 MOSFET. Datasheet pdf. Equivalent













Part

NTF5P03T3

Description

Power MOSFET



Feature


NTF5P03T3 Preferred Device Power MOSFET 5.2 Amps, 30 Volts P–Channel SOT–2 23 Features • • • • • • • • • Ultra Low RDS(on) Higher Efficiency Extending Battery Life Logi c Level Gate Drive Miniature SOT–223 Surface Mount Package Avalanche Energy Specified http://onsemi.com 5.2 AMPER ES 30 VOLTS RDS(on) = 100 mW P–Channe l D Applications DC–DC Converters Power Mana.
Manufacture

ON Semiconductor

Datasheet
Download NTF5P03T3 Datasheet


ON Semiconductor NTF5P03T3

NTF5P03T3; gement Motor Controls Inductive Loads Re places MMFT5P03HD G S MARKING DIAGRAM 4 1 2 3 SOT–223 CASE 318E STYLE 3 AWW 5P03 A WW 5P03 = Assembly Locat ion = Work Week = Device Code PIN ASSI GNMENT 4 Drain 1 2 3 Gate Drain S ource ORDERING INFORMATION Device NTF5 P03T3 Package SOT–223 Shipping 1000 T ape & Reel © Semiconductor Components Industries, LLC, 2002 .


ON Semiconductor NTF5P03T3

1 May, 2002 – Rev. 1 Publication Or der Number: NTF5P03T3/D NTF5P03T3 MAXI MUM RATINGS (TJ = 25°C unless otherwis e noted) Negative sign for P–Channel devices omitted for clarity Rating Drai n–to–Source Voltage Drain–to–Ga te Voltage (RGS = 1.0 MW) Gate–to–S ource Voltage – Continuous 1″ SQ. F R–4 or G–10 PCB Thermal Resistance – Junction to Ambient Total Power Dissipati.


ON Semiconductor NTF5P03T3

on @ TA = 25°C Linear Derating Factor D rain Current – Continuous @ TA = 25° C Continuous @ TA = 70°C Pulsed Drain Current (Note 1) Thermal Resistance – Junction to Ambient Total Power Dissip ation @ TA = 25°C Linear Derating Fact or Drain Current – Continuous @ TA = 25°C Continuous @ TA = 70°C Pulsed Dr ain Current (Note 1) Symbol VDSS VDGR V GS RTHJA PD ID ID IDM RTHJA PD.





Part

NTF5P03T3

Description

Power MOSFET



Feature


NTF5P03T3 Preferred Device Power MOSFET 5.2 Amps, 30 Volts P–Channel SOT–2 23 Features • • • • • • • • • Ultra Low RDS(on) Higher Efficiency Extending Battery Life Logi c Level Gate Drive Miniature SOT–223 Surface Mount Package Avalanche Energy Specified http://onsemi.com 5.2 AMPER ES 30 VOLTS RDS(on) = 100 mW P–Channe l D Applications DC–DC Converters Power Mana.
Manufacture

ON Semiconductor

Datasheet
Download NTF5P03T3 Datasheet




 NTF5P03T3
NTF5P03T3
Preferred Device
Power MOSFET
5.2 Amps, 30 Volts
P–Channel SOT–223
Features
Ultra Low RDS(on)
Higher Efficiency Extending Battery Life
Logic Level Gate Drive
Miniature SOT–223 Surface Mount Package
Avalanche Energy Specified
Applications
DC–DC Converters
Power Management
Motor Controls
Inductive Loads
Replaces MMFT5P03HD
http://onsemi.com
5.2 AMPERES
30 VOLTS
RDS(on) = 100 mW
P–Channel
D
G
S
MARKING
DIAGRAM
1
2
3
4 SOT–223
CASE 318E
STYLE 3
AWW
5P03
A
WW
5P03
= Assembly Location
= Work Week
= Device Code
PIN ASSIGNMENT
4 Drain
123
Gate Drain Source
ORDERING INFORMATION
Device
Package Shipping
NTF5P03T3
SOT–223 1000 Tape & Reel
© Semiconductor Components Industries, LLC, 2002
May, 2002 – Rev. 1
1
Publication Order Number:
NTF5P03T3/D




 NTF5P03T3
NTF5P03T3
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Negative sign for P–Channel devices omitted for clarity
Rating
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 MW)
Gate–to–Source Voltage – Continuous
1SQ.
FR–4 or G–10 PCB
10 seconds
Thermal Resistance – Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current – Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current (Note 1)
Minimum
FR–4 or G–10 PCB
10 seconds
Thermal Resistance – Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current – Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current (Note 1)
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy – Starting TJ = 25°C
(VDD = –30 Vdc, VGS = –10 Vdc, Peak IL = –12 Apk, L = 3.5 mH, RG = 25 W)
1. Repetitive rating; pulse width limited by maximum junction temperature.
Symbol
VDSS
VDGR
VGS
RTHJA
PD
ID
ID
IDM
RTHJA
PD
ID
ID
IDM
TJ, Tstg
EAS
Max
–30
–30
± 20
40
3.13
25
–5.2
–4.1
–26
80
1.56
12.5
–3.7
–2.9
–19
– 55 to 150
250
Unit
V
V
V
°C/W
Watts
mW/°C
A
A
A
°C/W
Watts
mW/°C
A
A
A
°C
mJ
http://onsemi.com
2




 NTF5P03T3
NTF5P03T3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage (Cpk 2.0) (Notes 2 and 4)
(VGS = 0 Vdc, ID = –0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = –24 Vdc, VGS = 0 Vdc)
(VDS = –24 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 2)
IDSS
IGSS
Gate Threshold Voltage (Cpk 2.0) (Notes 2 and 4)
(VDS = VGS, ID = –0.25 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
Static Drain–to–Source On–Resistance (Cpk 2.0) (Notes 2 and 4)
(VGS = –10 Vdc, ID = –5.2 Adc)
(VGS = –4.5 Vdc, ID = –2.6Adc)
Forward Transconductance (Note 2)
(VDS = –15 Vdc, ID = –2.0 Adc)
RDS(on)
gfs
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VDS = –25 Vdc, VGS = 0 V,
f = 1.0 MHz)
Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 3)
Ciss
Coss
Crss
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge
(VDD = –15 Vdc, ID = –4.0 Adc,
VGS = –10 Vdc,
RG = 6.0 W) (Note 2)
(VDD = –15 Vdc, ID = –2.0 Adc,
VGS = –10 Vdc,
RG = 6.0 W) (Note 2)
(VDS = –24 Vdc, ID = –4.0 Adc,
VGS = –10 Vdc) (Note 2)
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
Reverse Recovery Time
(IS = –4.0 Adc, VGS = 0 Vdc)
(IS = –4.0 Adc, VGS = 0 Vdc,
TJ = 125°C) (Note 2)
(IS = –4.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms) (Note 2)
Reverse Recovery Stored Charge
2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
3. Switching characteristics are independent of operating junction temperatures.
4. Reflects typical values.
Ť ŤCpk +
Max limit * Typ
3 SIGMA
VSD
trr
ta
tb
QRR
Min Typ Max Unit
–30 –
– –28
Vdc
– mV/°C
mAdc
– – –1.0
– – –25
± 100
nAdc
Vdc
–1.0 –1.75 –3.0
– 3.5 – mV/°C
mW
– 76 100
107 150
2.0 3.9
– Mhos
500 950
pF
– 153 440
– 58 140
– 10 24 ns
– 33 48
– 38 94
– 20 92
– 16 38 ns
– 45 110
– 23 60
– 24 80
– 15 38 nC
– 1.6 –
– 3.5 –
– 2.6 –
Vdc
– –1.1 –1.5
– –0.89 –
– 34 – ns
– 20 –
– 14 –
– 0.036 –
mC
http://onsemi.com
3




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