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power transistors. MZ0912B100Y Datasheet
















MZ0912B100Y transistors. Datasheet pdf. Equivalent













Part

MZ0912B100Y

Description

NPN microwave power transistors



Feature


DISCRETE SEMICONDUCTORS DATA SHEET MX0 912B100Y; MZ0912B100Y NPN microwave pow er transistors Product specification S upersedes data of June 1992 1997 Feb 20 Philips Semiconductors Product speci fication NPN microwave power transist ors FEATURES • Interdigitated structu re provides high emitter efficiency • Diffused emitter ballasting resistors providing excellent curren.
Manufacture

Philips

Datasheet
Download MZ0912B100Y Datasheet


Philips MZ0912B100Y

MZ0912B100Y; t sharing and withstanding a high VSWR Gold metallization realizes very sta ble characteristics and excellent lifet ime • Multicell geometry improves pow er sharing and low thermal resistance Input and output matching cell allow s an easier design of circuits. APPLICA TIONS • Common base class-C broadband pulse power amplifiers operating at 96 0 to 1215 MHz for TACAN ap.


Philips MZ0912B100Y

plication. DESCRIPTION NPN silicon plana r epitaxial microwave power transistors . The MX0912B100Y has a SOT439A metal c eramic flange package and improved outp ut prematching cells. It is recommended for new designs. The MZ0912B100Y has a SOT443A metal ceramic flange package w ith the base connected to the flange. I t is mounted in common base configurati on and specified i.


Philips MZ0912B100Y

n class C. olumns MX0912B100Y; MZ0912B1 00Y PINNING PIN 1 2 3 collector emitter base connected to flange DESCRIPTION 1 c b 3 2 Top view 3 e MAM045 Fig.1 Simplified outline and symbol (SOT439A ). handbook, halfpage 1 c b 3 e 2 T op view MAM314 Fig.2 Simplified outlin e and symbol (SOT443A). QUICK REFERENC E DATA Microwave performance at Tmb ≤ 25 °C in a common bas.





Part

MZ0912B100Y

Description

NPN microwave power transistors



Feature


DISCRETE SEMICONDUCTORS DATA SHEET MX0 912B100Y; MZ0912B100Y NPN microwave pow er transistors Product specification S upersedes data of June 1992 1997 Feb 20 Philips Semiconductors Product speci fication NPN microwave power transist ors FEATURES • Interdigitated structu re provides high emitter efficiency • Diffused emitter ballasting resistors providing excellent curren.
Manufacture

Philips

Datasheet
Download MZ0912B100Y Datasheet




 MZ0912B100Y
DISCRETE SEMICONDUCTORS
DATA SHEET
MX0912B100Y; MZ0912B100Y
NPN microwave power transistors
Product specification
Supersedes data of June 1992
1997 Feb 20




 MZ0912B100Y
Philips Semiconductors
NPN microwave power transistors
Product specification
MX0912B100Y; MZ0912B100Y
FEATURES
Interdigitated structure provides high emitter efficiency
Diffused emitter ballasting resistors providing excellent
current sharing and withstanding a high VSWR
Gold metallization realizes very stable characteristics
and excellent lifetime
Multicell geometry improves power sharing and low
thermal resistance
Input and output matching cell allows an easier design
of circuits.
PINNING
PIN
1
2
3
olumns
APPLICATIONS
Common base class-C broadband pulse power
amplifiers operating at 960 to 1215 MHz for TACAN
application.
3
Top view
DESCRIPTION
collector
emitter
base connected to flange
1
c
b
3
e
2 MAM045
DESCRIPTION
NPN silicon planar epitaxial microwave power transistors.
The MX0912B100Y has a SOT439A metal ceramic flange
package and improved output prematching cells. It is
recommended for new designs.
The MZ0912B100Y has a SOT443A metal ceramic flange
package with the base connected to the flange. It is
mounted in common base configuration and specified in
class C.
Fig.1 Simplified outline and symbol (SOT439A).
handbook, halfpage
1
2
Top view
c
b
3
e
MAM314
Fig.2 Simplified outline and symbol (SOT443A).
QUICK REFERENCE DATA
Microwave performance at Tmb 25 °C in a common base class-C broadband amplifier.
MODE OF OPERATION
f
(GHz)
VCC
PL
GP
(V) (W) (dB)
Class-C; tp = 10 µs; δ = 10 % 0.960 to 1.215
50
>100
>7
ηC
(%)
>42
Zi; ZL
()
see Figs 8 and 9
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 20
2




 MZ0912B100Y
Philips Semiconductors
NPN microwave power transistors
Product specification
MX0912B100Y; MZ0912B100Y
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCES
VCEO
VEBO
IC
Ptot
Tstg
Tj
Tsld
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
(peak power)
storage temperature
operating junction temperature
soldering temperature
open emitter
RBE = 0
open base
open collector
tp 10 µs; δ ≤ 10 %
tp 10 µs; δ ≤ 10 %;
Tmb = 75 °C
up to 0.2 mm from ceramic;
t 10 s
MIN.
65
MAX.
65
60
20
3
6
290
UNIT
V
V
V
V
A
W
+200
200
235
°C
°C
°C
handboo3k,0h0alfpage
Ptot
(W)
200
MGL046
100
0
50 0
100 Tmb (°C) 200
tp = 10 µs; δ = 10 %; Ptot max = 290 W.
Fig.3 Maximum power dissipation derating as a
function of mounting-base temperature.
1997 Feb 20
3




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