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MZ0912B50Y Datasheet, Equivalent, power transistor.

NPN microwave power transistor

NPN microwave power transistor

 

 

 

Part MZ0912B50Y
Description NPN microwave power transistor
Feature DISCRETE SEMICONDUCTORS DATA SHEET MZ0 912B50Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 18 Philips S emiconductors Product specification NPN microwave power transistor FEATURES
• Interdigitated structure provides high emitter efficiency
• Diffused em itter ballasting resistors providing ex cellent current sharing and withstandin g a high VSWR
• Gold metallization re alizes very stable characteristics and excellent lifetime
• Multicell geomet ry gives good balance of dissipated pow er and low thermal resistance
• Input and output matching cell al .
Manufacture Philips
Datasheet
Download MZ0912B50Y Datasheet
Part MZ0912B50Y
Description NPN microwave power transistor
Feature DISCRETE SEMICONDUCTORS DATA SHEET MZ0 912B50Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 18 Philips S emiconductors Product specification NPN microwave power transistor FEATURES
• Interdigitated structure provides high emitter efficiency
• Diffused em itter ballasting resistors providing ex cellent current sharing and withstandin g a high VSWR
• Gold metallization re alizes very stable characteristics and excellent lifetime
• Multicell geomet ry gives good balance of dissipated pow er and low thermal resistance
• Input and output matching cell al .
Manufacture Philips
Datasheet
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MZ0912B50Y

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MZ0912B50Y

MZ0912B50Y

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