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MZ0912B50Y Datasheet, Equivalent, power transistor.NPN microwave power transistor NPN microwave power transistor |
| Part | MZ0912B50Y |
|---|---|
| Description | NPN microwave power transistor |
| Feature | DISCRETE SEMICONDUCTORS
DATA SHEET
MZ0 912B50Y NPN microwave power transistor
Product specification Supersedes data of November 1994 1997 Feb 18
Philips S emiconductors
Product specification
NPN microwave power transistor
FEATURES • Interdigitated structure provides high emitter efficiency • Diffused em itter ballasting resistors providing ex cellent current sharing and withstandin g a high VSWR • Gold metallization re alizes very stable characteristics and excellent lifetime • Multicell geomet ry gives good balance of dissipated pow er and low thermal resistance • Input and output matching cell al . |
| Manufacture | Philips |
| Datasheet |
| Part | MZ0912B50Y |
|---|---|
| Description | NPN microwave power transistor |
| Feature | DISCRETE SEMICONDUCTORS
DATA SHEET
MZ0 912B50Y NPN microwave power transistor
Product specification Supersedes data of November 1994 1997 Feb 18
Philips S emiconductors
Product specification
NPN microwave power transistor
FEATURES • Interdigitated structure provides high emitter efficiency • Diffused em itter ballasting resistors providing ex cellent current sharing and withstandin g a high VSWR • Gold metallization re alizes very stable characteristics and excellent lifetime • Multicell geomet ry gives good balance of dissipated pow er and low thermal resistance • Input and output matching cell al . |
| Manufacture | Philips |
| Datasheet |
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