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Purpose Amplifier. N2222A Datasheet

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Purpose Amplifier. N2222A Datasheet
















N2222A Amplifier. Datasheet pdf. Equivalent













Part

N2222A

Description

NPN General Purpose Amplifier



Feature


PN2222A / MMBT2222A / MMPQ2222 / NMT2222 / PZT2222A PN2222A MMBT2222A C PZT2 222A C E C B E C B TO-92 E SOT-23 M ark: 1P B SOT-223 MMPQ2222 E2 B2 E3 B3 E4 B4 NMT2222 C2 E1 C1 E1 B1 SOI C-16 pin #1 C1 C2 C1 C3 C2 C4 C4 C3 B2 E2 SOT-6 Mark: .1B B1 NPN Gener al Purpose Amplifier This device is for use as a medium power amplifier and sw itch requiring col.
Manufacture

Fairchild

Datasheet
Download N2222A Datasheet


Fairchild N2222A

N2222A; lector currents up to 500 mA. Sourced fr om Process 19. Absolute Maximum Rating s* Symbol VCEO VCBO VEBO IC TJ, Tstg Co llector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 40 7 5 6.0 1.0 -55 to +150 Units V V V A ° C Operating and Storage Junction Tempe rature Range *These.


Fairchild N2222A

ratings are limiting values above which the serviceability of any semiconducto r device may be impaired. NOTES: 1) The se ratings are based on a maximum junct ion temperature of 150 degrees C. 2) Th ese are steady state limits. The factor y should be consulted on applications i nvolving pulsed or low duty cycle opera tions.  1997 Fairchild Semiconducto r Corporation PN222.


Fairchild N2222A

2A / MMBT2222A / MMPQ2222 / NMT2222 / PZ T2222A NPN General Purpose Amplifier ( continued) Electrical Characteristics Symbol Parameter TA = 25°C unless oth erwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V (BR)CBO V(BR)EBO ICEX ICBO IEBO IBL Col lector-Emitter Breakdown Voltage* Colle ctor-Base Breakdown Voltage Emitter-Bas e Breakdown Voltage.





Part

N2222A

Description

NPN General Purpose Amplifier



Feature


PN2222A / MMBT2222A / MMPQ2222 / NMT2222 / PZT2222A PN2222A MMBT2222A C PZT2 222A C E C B E C B TO-92 E SOT-23 M ark: 1P B SOT-223 MMPQ2222 E2 B2 E3 B3 E4 B4 NMT2222 C2 E1 C1 E1 B1 SOI C-16 pin #1 C1 C2 C1 C3 C2 C4 C4 C3 B2 E2 SOT-6 Mark: .1B B1 NPN Gener al Purpose Amplifier This device is for use as a medium power amplifier and sw itch requiring col.
Manufacture

Fairchild

Datasheet
Download N2222A Datasheet




 N2222A
PN2222A
MMBT2222A PZT2222A
C
BE
TO-92
C
SOT-23
Mark: 1P
E
B
C
SOT-223
E
C
B
MMPQ2222
B4
E4
B3
E3
B2
E2
B1
E1 C4
C4
C3
C3
C2
C2
SOIC-16
C1
pin #1 C1
NMT2222
C2
E1
C1
SOT-6
Mark: .1B
B2
E2
B1
NPN General Purpose Amplifier
This device is for use as a medium power amplifier and switch
requiring collector currents up to 500 mA. Sourced from Pro-
cess 19.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
40
VCBO
Collector-Base Voltage
75
VEBO
Emitter-Base Voltage
6.0
IC Collector Current - Continuous
1.0
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
A
°C
1997 Fairchild Semiconductor Corporation




 N2222A
Electrical Characteristics
Symbol
Parameter
NPN General Purpose Amplifier
(continued)
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
V(BR)CBO
Collector-Base Breakdown Voltage
V(BR)EBO
Emitter-Base Breakdown Voltage
ICEX Collector Cutoff Current
ICBO Collector Cutoff Current
IEBO Emitter Cutoff Current
IBL Base Cutoff Current
IC = 10 mA, IB = 0
IC = 10 µA, IE = 0
IE = 10 µA, IC = 0
VCE = 60 V, VEB(OFF) = 3.0 V
VCB = 60 V, IE = 0
VCB = 60 V, IE = 0, TA = 150°C
VEB = 3.0 V, IC = 0
VCE = 60 V, VEB(OFF) = 3.0 V
40
75
6.0
10
0.01
10
10
20
V
V
V
nA
µA
µA
nA
nA
ON CHARACTERISTICS
hFE DC Current Gain
VCE(sat)
VBE(sat)
Collector-Emitter Saturation
Voltage*
Base-Emitter Saturation Voltage*
IC = 0.1 mA, VCE = 10 V
35
IC = 1.0 mA, VCE = 10 V
50
IC = 10 mA, VCE = 10 V
75
IC = 10 mA, VCE = 10 V, TA = -55°C
35
IC = 150 mA, VCE = 10 V*
IC = 150 mA, VCE = 1.0 V*
100 300
50
IC = 500 mA, VCE = 10 V*
40
IC = 150 mA, IB = 15 mA
0.3
IC = 500 mA, IB = 50 mA
1.0
IC = 150 mA, IB = 15 mA
0.6 1.2
IC = 500 mA, IB = 50 mA
2.0
V
V
V
V
SMALL SIGNAL CHARACTERISTICS (except MMPQ2222 and NMT2222)
fT
Current Gain - Bandwidth Product
IC = 20 mA, VCE = 20 V, f = 100 MHz 300
MHz
Cobo
Cibo
rbCC
Output Capacitance
Input Capacitance
Collector Base Time Constant
VCB = 10 V, IE = 0, f = 100 kHz
VEB = 0.5 V, IC = 0, f = 100 kHz
IC = 20 mA, VCB = 20 V, f = 31.8 MHz
8.0 pF
25 pF
150 pS
NF
Re(hie)
Noise Figure
Real Part of Common-Emitter
High Frequency Input Impedance
IC = 100 µA, VCE = 10 V,
RS = 1.0 k, f = 1.0 kHz
IC = 20 mA, VCE = 20 V, f = 300 MHz
4.0 dB
60
SWITCHING CHARACTERISTICS
td Delay Time
tr Rise Time
ts Storage Time
tf Fall Time
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
(except MMPQ2222 and NMT2222)
VCC = 30 V, VBE(OFF) = 0.5 V,
IC = 150 mA, IB1 = 15 mA
VCC = 30 V, IC = 150 mA,
IB1 = IB2 = 15 mA
10 ns
25 ns
225 ns
60 ns
Spice Model
NPN (Is=14.34f Xti=3 Eg=1.11 Vaf=74.03 Bf=255.9 Ne=1.307 Ise=14.34f Ikf=.2847 Xtb=1.5 Br=6.092 Nc=2 Isc=0
Ikr=0 Rc=1 Cjc=7.306p Mjc=.3416 Vjc=.75 Fc=.5 Cje=22.01p Mje=.377 Vje=.75 Tr=46.91n Tf=411.1p Itf=.6
Vtf=1.7 Xtf=3 Rb=10)




 N2222A
NPN General Purpose Amplifier
(continued)
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJC Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
Max
PN2222A
625
5.0
83.3
*PZT2222A
1,000
8.0
200 125
Units
mW
mW /°C
°C/W
°C/W
Symbol
Characteristic
Max
PD Total Device Dissipation
Derate above 25°C
RθJA Thermal Resistance, Junction to Ambient
Effective 4 Die
Each Die
**MMBT2222A
350
2.8
357
MMPQ2222
1,000
8.0
125
240
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
**Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Units
mW
mW /°C
°C/W
°C/W
°C/W
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
500
400
VCE = 5V
125 °C
300
200
25 °C
100
- 40 °C
0
0.1 0.3 1 3 10 30 100
IC - COLLECTOR CURRENT (mA)
300
Base-Emitter Saturation
Voltage vs Collector Current
1 β = 10
0.8 - 40 °C
25 °C
0.6 125 °C
0.4
1
10 100
I C - COLLECTOR CURRENT (mA)
500
Collector-Emitter Saturation
Voltage vs Collector Current
0.4
β = 10
0.3
0.2
0.1
1
125 °C
25 °C
- 40 °C
10 100
I C - COLLECTOR CURRENT (mA)
500
Base-Emitter ON Voltage vs
Collector Current
1
VCE = 5V
0.8
- 40 °C
0.6 25 °C
125 °C
0.4
0.2
0.1
1 10
I C - COLLECTOR CURRENT (mA)
25




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