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N302AP Datasheet, Equivalent, Power MOSFETs.

N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs

N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs

 

 

 

Part N302AP
Description N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
Feature ISL9N302AP3 January 2002 ISL9N302AP3 N -Channel Logic Level PWM Optimized Ultr aFET® Trench Power MOSFETs General Des cription This device employs a new adva nced trench MOSFET technology and featu res low gate charge while maintaining l ow on-resistance.
Optimized for switchi ng applications, this device improves t he overall efficiency of DC/DC converte rs and allows operation to higher switc hing frequencies.
Features
• Fast sw itching
• rDS(ON) = 0.
0019Ω (Typ), VGS = 10V
• rDS(ON) = 0.
0027Ω (Typ) , VGS = 4.
5V
• Qg (Typ) = 110nC, VGS = 5V
• Qgd (Typ) = 31nC
• CISS (Typ ) = 11000pF Applications
• DC/ .
Manufacture Fairchild
Datasheet
Download N302AP Datasheet
Part N302AP
Description N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
Feature ISL9N302AP3 January 2002 ISL9N302AP3 N -Channel Logic Level PWM Optimized Ultr aFET® Trench Power MOSFETs General Des cription This device employs a new adva nced trench MOSFET technology and featu res low gate charge while maintaining l ow on-resistance.
Optimized for switchi ng applications, this device improves t he overall efficiency of DC/DC converte rs and allows operation to higher switc hing frequencies.
Features
• Fast sw itching
• rDS(ON) = 0.
0019Ω (Typ), VGS = 10V
• rDS(ON) = 0.
0027Ω (Typ) , VGS = 4.
5V
• Qg (Typ) = 110nC, VGS = 5V
• Qgd (Typ) = 31nC
• CISS (Typ ) = 11000pF Applications
• DC/ .
Manufacture Fairchild
Datasheet
Download N302AP Datasheet

N302AP

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N302AP

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