N302AP | Fairchild
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs, ISL9N302AP3
January 2002
ISL9N302AP3
N-Channel Logic Level PWM Optim.
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs, ISL9N302AP3
January 2002
ISL9N302AP3
N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs
General Description
This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequ.
- N302AP | Fairchild
- N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
- Download N302AP Datasheet
- ISL9N302AP3
January 2002
ISL9N302AP3
N-Channel Logic Level PWM Optimized UltraFET® Trench Power MO.
- ISL9N302AP3
January 2002
ISL9N302AP3
N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs
General Description
This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.
Features
• Fast switching • rDS(ON) = 0.0.
