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N302AP Datasheet, Equivalent, Power MOSFETs.N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs |
| Part | N302AP |
|---|---|
| Description | N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs |
| Feature | ISL9N302AP3
January 2002
ISL9N302AP3
N -Channel Logic Level PWM Optimized Ultr aFET® Trench Power MOSFETs
General Des cription
This device employs a new adva nced trench MOSFET technology and featu res low gate charge while maintaining l ow on-resistance. Optimized for switchi ng applications, this device improves t he overall efficiency of DC/DC converte rs and allows operation to higher switc hing frequencies. Features • Fast sw itching • rDS(ON) = 0. 0019Ω (Typ), VGS = 10V • rDS(ON) = 0. 0027Ω (Typ) , VGS = 4. 5V • Qg (Typ) = 110nC, VGS = 5V • Qgd (Typ) = 31nC • CISS (Typ ) = 11000pF Applications • DC/ . |
| Manufacture | Fairchild |
| Datasheet |
| Part | N302AP |
|---|---|
| Description | N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs |
| Feature | ISL9N302AP3
January 2002
ISL9N302AP3
N -Channel Logic Level PWM Optimized Ultr aFET® Trench Power MOSFETs
General Des cription
This device employs a new adva nced trench MOSFET technology and featu res low gate charge while maintaining l ow on-resistance. Optimized for switchi ng applications, this device improves t he overall efficiency of DC/DC converte rs and allows operation to higher switc hing frequencies. Features • Fast sw itching • rDS(ON) = 0. 0019Ω (Typ), VGS = 10V • rDS(ON) = 0. 0027Ω (Typ) , VGS = 4. 5V • Qg (Typ) = 110nC, VGS = 5V • Qgd (Typ) = 31nC • CISS (Typ ) = 11000pF Applications • DC/ . |
| Manufacture | Fairchild |
| Datasheet |
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