Document
ISL9N302AS3ST
April 2002
ISL9N302AS3ST
N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs
General Description
This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.
Features
• Fast switching • rDS(ON) = 0.0019Ω (Typ), VGS = 10V • rDS(ON) = 0.0027Ω (Typ), VGS = 4.5V • Qg (Typ) = 110nC, VGS = 5V • Qgd (Typ) = 31nC • CISS (Typ) = 11000pF
Applications
• DC/DC converters
DRAIN (FLANGE) D GATE SOURCE G S
TO-263AB MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) ID Continuous (TC = 100oC, VGS = 4.5V) Continuous (TC = 25oC, VGS = 10V, R θJA = 43oC/W) Pulsed PD TJ, TSTG Power dissipation Derate above 25oC Operating and Storage Temperature 75 75 28 Figure 4 345 2.3 -55 to 175 A A A A W W/oC
o
Ratings 30 ±20
Units V V
C
Thermal Characteristics
RθJC RθJA RθJA Thermal Resistance Junction to Case TO-263 Thermal Resistance Junction to Ambient TO-263 Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 0.43 62 43
o o o
C/W C/W C/W
Package Marking and Ordering Information
Device Marking N302AS Device ISL9N302AS3ST Package TO-263AB Reel Size 330mm Tape Width 24mm Quantity 800 units
©2002 Fairchild Semiconductor Corporation
Rev. B1,April 2002
ISL9N302AS3ST
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V VDS = 25V VGS = 0V VGS = ±20V TC = 150o 30 1 250 ±100 V µA nA
On Characteristics
VGS(TH) rDS(ON) Gate to Source Threshold Voltage Drain to Source On Resistance VGS = VDS, ID = 250µA ID = 75A, VGS = 10V ID = 75A, VGS = 4.5V 1 3 V Ω 0.0019 0.0023 0.0027 0.0033
Dynamic Characteristics
CISS COSS CRSS Qg(TOT) Qg(5) Qg(TH) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Total Gate Charge at 5V Threshold Gate Charge Gate to Source Gate Charge Gate to Drain “Miller” Charge VDS = 15V, VGS = 0V, f = 1MHz VGS = 0V to 10V VGS = 0V to 5V V = 15V DD VGS = 0V to 1V ID = 75A Ig = 1.0mA 11000 2000 900 200 110 12 25 31 300 165 18 pF pF pF nC nC nC nC nC
Switching Characteristics (VGS = 4.5V)
tON td(ON) tr td(OFF) tf tOFF Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time VDD = 15V, ID = 28A VGS = 4.5V, RGS = 1.5Ω 29 120 45 34 224 119 ns ns ns ns ns ns
Switching Characteristics (VGS = 10V)
tON td(ON) tr td(OFF) tf tOFF Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time VDD = 15V, ID = 28A VGS = 10V, R GS = 1.5Ω 16 120 70 30 204 150 ns ns ns ns ns ns
Unclamped Inductive Switching
tAV Avalanche Time ID = 7.2A, L = 3.0mH 480 µs
Drain-Source Diode Characteristics
VSD trr QRR Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge ISD = 75A ISD = 40A ISD = 75A, dISD /dt = 100A/µs ISD = 75A, dISD /dt = 100A/µs 1.25 1.0 42 34 V V ns nC
©2002 Fairchild Semiconductor Corporation
Rev. B1 April 2002
ISL9N302AS3ST
Typical Characteristic
1.2 80
POWER DISSIPATION MULTIPLIER
1.0 ID, DRAIN CURRENT (A) 60 VGS = 10V
0.8
VGS = 4.5V 40
0.6
0.4
20
0.2
0 0 25 50 75 100 125 150 175 TC , CASE TEMPERATURE (oC)
0 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (o C)
Figure 1. Normalized Power Dissipation vs Ambient Temperature
2 1 DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01
Figure 2. Maximum Continuous Drain Current vs Case Temperature
ZθJC, NORMALIZED THERMAL IMPEDANCE
PDM 0.1 t1 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC 10-2 t , RECTANGULAR PULSE DURATION (s) 10-1 100 101
0.01 10-5
10-4
10-3
Figure 3. Normalized Maximum Transient Thermal Impedance
5000 TC = 25 oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 175 - TC 150
TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION
IDM , PEAK CURRENT (A)
1000
VGS = 10V
VGS = 5V
100 50 10-5 10-4 10-3 10-2 t, PULSE WIDTH (s) 10-1 100 101
Figure 4. Peak Current Capability
©2002 Fairchild Semiconductor Corporation
Rev. B1 April 2002
ISL9N302AS3ST
Typical Characteristic (Continued)
150 PULSE DURATION = 80µs 125 ID , DRAIN CURRENT (A) DUTY CYCLE = 0.5% MAX VDD = 15V ID, DRAIN CURRENT (A) 125 VGS = 3V 100 150 VGS = 3.5V
100
75 TJ = 25oC 50 TJ = 175 oC 25 TJ = -55oC 0 1.5 2.0 2.5 3.0 3.5 VGS , GATE TO SOURCE VOLTAGE (V)
75 VGS = 4.5V 50 VGS = 10V TC = 25oC PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 0 0.5 1.0 1.5 2.0
25
0 VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
10 NORMALIZED DRAIN TO SOURCE ON RESISTANCE PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 8 .