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Power MOSFETs. N302AS Datasheet

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Power MOSFETs. N302AS Datasheet
















N302AS MOSFETs. Datasheet pdf. Equivalent













Part

N302AS

Description

N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs



Feature


ISL9N302AS3ST April 2002 ISL9N302AS3ST N-Channel Logic Level PWM Optimized Ul traFET® Trench Power MOSFETs General D escription This device employs a new ad vanced trench MOSFET technology and fea tures low gate charge while maintaining low on-resistance. Optimized for switc hing applications, this device improves the overall efficiency of DC/DC conver ters and allows ope.
Manufacture

Fairchild

Datasheet
Download N302AS Datasheet


Fairchild N302AS

N302AS; ration to higher switching frequencies. Features • Fast switching • rDS(ON ) = 0.0019Ω (Typ), VGS = 10V • rDS( ON) = 0.0027Ω (Typ), VGS = 4.5V • Q g (Typ) = 110nC, VGS = 5V • Qgd (Typ) = 31nC • CISS (Typ) = 11000pF Appli cations • DC/DC converters DRAIN (FL ANGE) D GATE SOURCE G S TO-263AB MOSFE T Maximum Ratings TA = 25°C unless oth erwise noted Symbol VDSS VGS Paramete.


Fairchild N302AS

r Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) ID Continuous (TC = 1 00oC, VGS = 4.5V) Continuous (TC = 25oC , VGS = 10V, R θJA = 43oC/W) Pulsed PD TJ, TSTG Power dissipation Derate abov e 25oC Operating and Storage Temperatur e 75 75 28 Figure 4 345 2.3 -55 to 175 A A A A W W/oC o Ratings 30 ±20 Unit s V V C Thermal Ch.


Fairchild N302AS

aracteristics RθJC RθJA RθJA Thermal Resistance Junction to Case TO-263 Ther mal Resistance Junction to Ambient TO-2 63 Thermal Resistance Junction to Ambie nt TO-263, 1in2 copper pad area 0.43 62 43 o o o C/W C/W C/W Package Marking and Ordering Information Device Markin g N302AS Device ISL9N302AS3ST Package T O-263AB Reel Size 330mm Tape Width 24mm Quantity 800 units .





Part

N302AS

Description

N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs



Feature


ISL9N302AS3ST April 2002 ISL9N302AS3ST N-Channel Logic Level PWM Optimized Ul traFET® Trench Power MOSFETs General D escription This device employs a new ad vanced trench MOSFET technology and fea tures low gate charge while maintaining low on-resistance. Optimized for switc hing applications, this device improves the overall efficiency of DC/DC conver ters and allows ope.
Manufacture

Fairchild

Datasheet
Download N302AS Datasheet




 N302AS
April 2002
ISL9N302AS3ST
N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs
General Description
This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
Applications
• DC/DC converters
Features
• Fast switching
• rDS(ON) = 0.0019(Typ), VGS = 10V
• rDS(ON) = 0.0027(Typ), VGS = 4.5V
• Qg (Typ) = 110nC, VGS = 5V
• Qgd (Typ) = 31nC
• CISS (Typ) = 11000pF
DRAIN
(FLANGE)
D
GATE
SOURCE
TO-263AB
G
S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V)
Continuous (TC = 100oC, VGS = 4.5V)
Continuous (TC = 25oC, VGS = 10V, RθJA = 43oC/W)
Pulsed
PD
Power dissipation
Derate above 25oC
TJ, TSTG Operating and Storage Temperature
Ratings
30
±20
75
75
28
Figure 4
345
2.3
-55 to 175
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case TO-263
Thermal Resistance Junction to Ambient TO-263
Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area
0.43
62
43
Package Marking and Ordering Information
Device Marking
N302AS
Device
ISL9N302AS3ST
Package
TO-263AB
Reel Size
330mm
Tape Width
24mm
Units
V
V
A
A
A
A
W
W/oC
oC
oC/W
oC/W
oC/W
Quantity
800 units
©2002 Fairchild Semiconductor Corporation
Rev. B1,April 2002




 N302AS
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
VDS = 25V
VGS = 0V
TC = 150o
VGS = ±20V
30
-
-
-
On Characteristics
VGS(TH)
Gate to Source Threshold Voltage
rDS(ON)
Drain to Source On Resistance
VGS = VDS, ID = 250µA
ID = 75A, VGS = 10V
ID = 75A, VGS = 4.5V
1
-
-
Dynamic Characteristics
CISS
COSS
CRSS
Qg(TOT)
Qg(5)
Qg(TH)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 15V, VGS = 0V,
f = 1MHz
VGS = 0V to 10V
VGS = 0V to 5V VDD = 15V
VGS = 0V to 1V ID = 75A
Ig = 1.0mA
-
-
-
-
-
-
-
Switching Characteristics (VGS = 4.5V)
tON
td(ON)
Turn-On Time
Turn-On Delay Time
tr
td(OFF)
Rise Time
Turn-Off Delay Time
tf
tOFF
Fall Time
Turn-Off Time
VDD = 15V, ID = 28A
VGS = 4.5V, RGS = 1.5
-
-
-
-
-
-
Switching Characteristics (VGS = 10V)
tON Turn-On Time
td(ON)
tr
Turn-On Delay Time
Rise Time
td(OFF)
tf
Turn-Off Delay Time
Fall Time
tOFF
Turn-Off Time
VDD = 15V, ID = 28A
VGS = 10V, RGS = 1.5
-
-
-
-
-
-
Unclamped Inductive Switching
tAV Avalanche Time
ID = 7.2A, L = 3.0mH
480
Drain-Source Diode Characteristics
VSD
trr
QRR
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
ISD = 75A
ISD = 40A
ISD = 75A, dISD/dt = 100A/µs
ISD = 75A, dISD/dt = 100A/µs
-
-
-
-
Typ Max Units
- -V
-1
µA
- 250
- ±100 nA
-3
0.0019 0.0023
0.0027 0.0033
V
11000
2000
900
200
110
12
25
31
-
-
-
300
165
18
-
-
pF
pF
pF
nC
nC
nC
nC
nC
- 224
29 -
120 -
45 -
34 -
- 119
ns
ns
ns
ns
ns
ns
- 204
16 -
120 -
70 -
30 -
- 150
ns
ns
ns
ns
ns
ns
- - µs
-
1.25
V
- 1.0 V
- 42 ns
- 34 nC
©2002 Fairchild Semiconductor Corporation
Rev. B1 April 2002




 N302AS
Typical Characteristic
1.2 80
1.0
60 VGS = 10V
0.8
VGS = 4.5V
0.6 40
0.4
20
0.2
0
0 25 50 75 100 125 150 175
TC , CASE TEMPERATURE (oC)
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
0
25
50 75 100 125 150
TC, CASE TEMPERATURE (oC)
175
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
2
DUTY CYCLE - DESCENDING ORDER
1 0.5
0.2
0.1
0.05
0.02
0.01
0.1
PDM
0.01
10-5
SINGLE PULSE
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
10-4
10-3
10-2
10-1
100
t , RECTANGULAR PULSE DURATION (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
101
5000
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
1000 VGS = 10V
VGS = 5V
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
175 - TC
150
100
50
10-5
10-4
10-3
10-2
10-1
100
101
t, PULSE WIDTH (s)
Figure 4. Peak Current Capability
©2002 Fairchild Semiconductor Corporation
Rev. B1 April 2002




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