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N302AS Datasheet, Equivalent, Power MOSFETs.

N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs

N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs

 

 

 

Part N302AS
Description N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
Feature ISL9N302AS3ST April 2002 ISL9N302AS3ST N-Channel Logic Level PWM Optimized Ul traFET® Trench Power MOSFETs General D escription This device employs a new ad vanced trench MOSFET technology and fea tures low gate charge while maintaining low on-resistance.
Optimized for switc hing applications, this device improves the overall efficiency of DC/DC conver ters and allows operation to higher swi tching frequencies.
Features
• Fast switching
• rDS(ON) = 0.
0019Ω (Typ) , VGS = 10V
• rDS(ON) = 0.
0027Ω (Ty p), VGS = 4.
5V
• Qg (Typ) = 110nC, VG S = 5V
• Qgd (Typ) = 31nC
• CISS (T yp) = 11000pF Applications
• D .
Manufacture Fairchild
Datasheet
Download N302AS Datasheet
Part N302AS
Description N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
Feature ISL9N302AS3ST April 2002 ISL9N302AS3ST N-Channel Logic Level PWM Optimized Ul traFET® Trench Power MOSFETs General D escription This device employs a new ad vanced trench MOSFET technology and fea tures low gate charge while maintaining low on-resistance.
Optimized for switc hing applications, this device improves the overall efficiency of DC/DC conver ters and allows operation to higher swi tching frequencies.
Features
• Fast switching
• rDS(ON) = 0.
0019Ω (Typ) , VGS = 10V
• rDS(ON) = 0.
0027Ω (Ty p), VGS = 4.
5V
• Qg (Typ) = 110nC, VG S = 5V
• Qgd (Typ) = 31nC
• CISS (T yp) = 11000pF Applications
• D .
Manufacture Fairchild
Datasheet
Download N302AS Datasheet

N302AS

N302AS
N302AS

N302AS

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