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N303AP 3.2m. Datasheet pdf. Equivalent













Part

N303AP

Description

N-Channel Logic Level UltraFET Trench MOSFETs 30V / 75A / 3.2m



Feature


ISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS 3 September 2002 PWM Optimized ISL9N 303AP3 / ISL9N303AS3ST / ISL9N303AS3 N- Channel Logic Level UltraFET® Trench M OSFETs 30V, 75A, 3.2mΩ General Descri ption This device employs a new advance d trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this de.
Manufacture

Fairchild

Datasheet
Download N303AP Datasheet


Fairchild N303AP

N303AP; vice improves the overall efficiency of DC/DC converters and allows operation t o higher switching frequencies. Featur es • Fast switching • rDS(ON) = 0.0 026Ω (Typ), VGS = 10V • rDS(ON) = 0 .004Ω (Typ), VGS = 4.5V • Qg (Typ) = 61nC, VGS = 5V • Qgd (Typ) = 17nC CISS (Typ) = 7000pF Applications DC/DC converters DRAIN (FLANGE) SOU RCE DRAIN GATE SOURCE GATE DRAIN (F.


Fairchild N303AP

LANGE) SOURCE DRAIN GATE G DRAIN (FLANG E) D TO-220AB TO-263AB TO-262AB S MOSFET Maximum Ratings TC= 25°C unles s otherwise noted Symbol VDSS VGS Param eter Drain to Source Voltage Gate to So urce Voltage Drain Current Continuous ( TC = 25oC, VGS = 10V) ID Continuous (TC = 100oC, VGS = 4.5V) Continuous (TC = 25oC, VGS = 10V, RθJA = 43oC/W) Pulsed PD TJ, TSTG Power d.


Fairchild N303AP

issipation Derate above Operating and St orage Temperature 75 75 25 Figure 4 215 1.43 -55 to 175 W W/oC o Ratings 30 20 Units V V A A A C Thermal Charac teristics RθJC RθJA RθJA Thermal Res istance Junction to Case TO-220, TO-262 , TO-263 Thermal Resistance Junction to Ambient TO-220, TO-262, TO-263 Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area .





Part

N303AP

Description

N-Channel Logic Level UltraFET Trench MOSFETs 30V / 75A / 3.2m



Feature


ISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS 3 September 2002 PWM Optimized ISL9N 303AP3 / ISL9N303AS3ST / ISL9N303AS3 N- Channel Logic Level UltraFET® Trench M OSFETs 30V, 75A, 3.2mΩ General Descri ption This device employs a new advance d trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this de.
Manufacture

Fairchild

Datasheet
Download N303AP Datasheet




 N303AP
September 2002
PWM Optimized
ISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3
N-Channel Logic Level UltraFET® Trench MOSFETs
30V, 75A, 3.2m
General Description
This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.
Features
• Fast switching
• rDS(ON) = 0.0026(Typ), VGS = 10V
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
• rDS(ON) = 0.004(Typ), VGS = 4.5V
• Qg (Typ) = 61nC, VGS = 5V
Applications
• DC/DC converters
• Qgd (Typ) = 17nC
• CISS (Typ) = 7000pF
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
TO-220AB
GATE
DRAIN
(FLANGE)
SOURCE
TO-263AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
TO-262AB
G
D
S
MOSFET Maximum Ratings TC= 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V)
Continuous (TC = 100oC, VGS = 4.5V)
Continuous (TC = 25oC, VGS = 10V, RθJA = 43oC/W)
Pulsed
Power dissipation
Derate above
TJ, TSTG Operating and Storage Temperature
Ratings
30
±20
75
75
25
Figure 4
215
1.43
-55 to 175
Units
V
V
A
A
A
W
W/oC
oC
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case TO-220, TO-262, TO-263
Thermal Resistance Junction to Ambient TO-220, TO-262, TO-263
Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area
0.7
62
43
Package Marking and Ordering Information
Device Marking
N303AS
N303AP
N303AS
Device
ISL9N303AS3ST
ISL9N303AP3
ISL9N303AS3
Package
TO-263AB
TO-220AB
TO-262AA
Reel Size
330mm
Tube
Tube
Tape Width
24mm
N/A
N/A
oC/W
oC/W
oC/W
Quantity
800 units
50 units
50 units
©2002 Fairchild Semiconductor Corporation
ISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3, Rev. C1




 N303AP
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
VDS = 25V
VGS = 0V
TC = 150o
VGS = ±20V
30
-
-
-
- -V
-1
µA
- 250
- ±100 nA
On Characteristics
VGS(TH)
Gate to Source Threshold Voltage
rDS(ON)
Drain to Source On Resistance
VGS = VDS, ID = 250µA
ID = 75A, VGS = 10V
ID = 75A, VGS = 4.5V
1 - 3V
- 0.0026 0.0032
- 0.004 0.005
Dynamic Characteristics
CISS
COSS
CRSS
Qg(TOT)
Qg(5)
Qg(TH)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 15V, VGS = 0V,
f = 1MHz
VGS = 0V to 10V
VGS = 0V to 5V VDD = 15V
VGS = 0V to 1V ID = 75A
Ig = 1.0mA
-
-
-
-
-
-
-
7000
1350
570
115
61
6.5
14
17
-
-
-
172
92
9.8
-
-
pF
pF
pF
nC
nC
nC
nC
nC
Switching Characteristics (VGS = 4.5V)
tON Turn-On Time
td(ON)
tr
Turn-On Delay Time
Rise Time
td(OFF)
Turn-Off Delay Time
tf Fall Time
tOFF
Turn-Off Time
VDD = 15V, ID = 24A
VGS = 4.5V, RG = 2.4
- - 155 ns
- 22 - ns
- 80 - ns
- 35 - ns
- 25 - ns
- - 90 ns
Switching Characteristics (VGS = 10V)
tON Turn-On Time
td(ON)
Turn-On Delay Time
tr Rise Time
td(OFF)
tf
Turn-Off Delay Time
Fall Time
tOFF
Turn-Off Time
VDD = 15V, ID = 24A
VGS = 10V, RG = 2.4
- - 123 ns
- 12 - ns
- 69 - ns
- 51 - ns
- 21 - ns
- - 107 ns
Unclamped Inductive Switching
tAV Avalanche Time
ID = 4.1A L = 3.0 mH
275 -
- µs
Drain-Source Diode Characteristics
VSD Source to Drain Diode Voltage
trr
QRR
Reverse Recovery Time
Reverse Recovered Charge
ISD = 75A
ISD = 35A
ISD = 75A, dISD/dt = 100A/µs
ISD = 75A, dISD/dt = 100A/µs
-
-
-
-
- 1.25 V
- 1.0 V
- 31 ns
- 20 nC
©2002 Fairchild Semiconductor Corporation
ISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3, Rev. C1




 N303AP
Typical Characteristics
1.2 80
1 VGS = 10V
60
0.8
VGS = 4.5V
0.6 40
0.4
20
0.2
0
0 25 50 75 100 125 150 175
TC, CASE TEMPERATURE (oC)
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
0
25 50 75 100 125 150 175
TC, CASE TEMPERATURE (oC)
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
2
DUTY CYCLE - DESCENDING ORDER
0.5
1 0.2
0.1
0.05
0.02
0.01
PDM
0.1
0.01
10-5
SINGLE PULSE
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
10-4
10-3
10-2
10-1
100
t, RECTANGULAR PULSE DURATION (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
101
3000
1000
VGS = 10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
100
VGS = 5V
50
10-5
10-4
10-3
10-2
10-1
t, PULSE WIDTH (s)
Figure 4. Peak Current Capability
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
175 - TC
150
10-0
101
©2002 Fairchild Semiconductor Corporation
ISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3, Rev. C1




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