NAND01G-A

NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories FEATURES SUMMARY ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 1 Gbit memory array – Up to 32 Mbit spare area – Cost effective solutions for mass storage applications NAND INTERFACE – x8 or x16 bus width – Multiplexed Address/ Data – Pinout compatibility for all densities SUPPLY VOLTAGE – 1.8V device: VDD = 1.7 to 1.95V – 3.0V device: VDD = 2.7 to 3.6V PAGE SIZE – x8 device: (512 + 16 spare) Bytes – x16 device: (256 + 8 spare) Words BLOCK SIZE – x8 device: (16K + 512 spare) Bytes – x16 device: (8K + 256 spare) Words PAGE READ / PROGRAM – Random access: 12µs (max) – Sequential access: 50ns (min) – Page program time: 200µs (typ) COPY BACK PROGRAM MODE – Fast page copy without external buffering FAST BLOCK ERASE – Block erase time: 2ms (Typ) STATUS REGISTER ELECTRONIC SIGNATURE CHIP ENABLE ‘DON’T CARE’ OPTION – Simple interface with microcontroller SERIAL NUMBER OPTION HARDWARE DATA PROTECTION – Program/Erase locked during Power transitions Figure 1. Packages TSOP48 12 x 20mm WSOP48 12 x 17 x 0.65mm FBGA VFBGA55 8 x 10 x 1mm TFBGA55 8 x 10 x 1.2mm VFBGA63 8.5 x 15 x 1mm TFBGA63 8.5 x 15 x 1.2mm ■ ■ ■ DATA INTEGRITY – 100,000 Program/Erase cycles – 10 years Data Retention RoHS COMPLIANCE – Lead-Free Components are Compliant with the RoHS Directive DEVELOPMENT TOOLS – Error Correction Code software and ...