| Feature |
ND2012L/2020L
N-Channel Depletion-Mode MOSFET Transistors
Product Summary
Part Number
ND2012L ND2020L
V(BR)DSV Min (V)
200
rDS(on) Max (W)
12 20
VGS(off) (V)
–1.5 to –4 –0.5 to –2.5
ID (A)
0.16 0.132
Features
D D D D D High Breakdown Voltage: 220 V Normally “On” Low rDS Switch: 9 W Low Input and Output Leakage Low-Power Drive Requirement Low Input Capacitance
Benefits
D D D D D Full-Voltage Operation Low Offset Voltage Low Error Voltage Easily Driven Without Buffer High-Speed Switching
Applications
D D D D D Normally “On” Switching Circuits Current Sources/Limiters Power Supply, Convert. |
