DatasheetsPDF.com

ND2012L Dataheets PDF



Part Number ND2012L
Manufacturers TEMIC
Logo TEMIC
Description N-Channel Depletion-Mode MOSFET Transistors
Datasheet ND2012L DatasheetND2012L Datasheet (PDF)

ND2012L/2020L N-Channel Depletion-Mode MOSFET Transistors Product Summary Part Number ND2012L ND2020L V(BR)DSV Min (V) 200 rDS(on) Max (W) 12 20 VGS(off) (V) –1.5 to –4 –0.5 to –2.5 ID (A) 0.16 0.132 Features D D D D D High Breakdown Voltage: 220 V Normally “On” Low rDS Switch: 9 W Low Input and Output Leakage Low-Power Drive Requirement Low Input Capacitance Benefits D D D D D Full-Voltage Operation Low Offset Voltage Low Error Voltage Easily Driven Without Buffer High-Speed Switching Ap.

  ND2012L   ND2012L


Document
ND2012L/2020L N-Channel Depletion-Mode MOSFET Transistors Product Summary Part Number ND2012L ND2020L V(BR)DSV Min (V) 200 rDS(on) Max (W) 12 20 VGS(off) (V) –1.5 to –4 –0.5 to –2.5 ID (A) 0.16 0.132 Features D D D D D High Breakdown Voltage: 220 V Normally “On” Low rDS Switch: 9 W Low Input and Output Leakage Low-Power Drive Requirement Low Input Capacitance Benefits D D D D D Full-Voltage Operation Low Offset Voltage Low Error Voltage Easily Driven Without Buffer High-Speed Switching Applications D D D D D Normally “On” Switching Circuits Current Sources/Limiters Power Supply, Converter Circuits Solid-State Relays Telecom Switches TO-226AA (TO-92) S 1 G 2 D 3 Top View Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta TA= 25_C TA= 100_C TA= 25_C TA= 100_C Symbol VDS VGS ID IDM PD RthJA TJ, Tstg ND2012L 200 "30 0.16 0.1 0.8 0.8 0.32 156 ND2020L 200 "30 0.132 0.083 0.8 0.8 0.32 156 Unit V A Power Dissipation Maximum Junction-to-Ambient Operating Junction and Storage Temperature Range W _C/W _C –55 to 150 Notes a. Pulse width limited by maximum junction temperature. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70197. Applications information may also be obtained via FaxBack, request document #70612. Siliconix S-52426—Rev. C, 14-Apr-97 1 ND2012L/2020L Specificationsa Limits ND2012L ND2020L Parameter Static Symbol Test Conditions Typb Min Max Min Max Unit VGS = –8 V, ID = 10 mA Drain Source Breakdown Voltage Drain-Source Gate-Source Cutoff Voltage Gate-Body Leakage V(BR)DSV VGS(off) IGSS VGS = –5 V, ID = 10 mA VDS = 5 V, ID = 10 mA VDS = 0 V, VGS = "20 V TJ = 125_C VDS = 160 V, VGS = –8 V Drain Cutoff Current ID(off) TJ = 125_C VDS = 160 V, VGS = –5 V TJ = 125_C Drain-Saturation Currentc IDSS VDS = 10 V, VGS = 0 V VGS = 2 V, ID = 20 mA Drain-Source On-Resistancec rDS(on) VGS = 0 V, ID = 20 mA TJ = 125_C Forward Transconductance c Common Source Output Conductancec gfs gos VDS = 7 7.5 5 V V, ID = 20 mA 220 220 200 200 –1.5 –4 "10 "50 1 200 1 200 mA –0.5 –2.5 "10 "50 nA V 300 7 8 12.6 55 75 30 30 mA 12 30 20 50 W mS mS Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VDS = 25 V, VGS = –5 V, f = 1 MHz 35 10 2 100 20 5 100 20 5 pF Switchingd Turn-On Time td(on) tr td(off) tf Notes a. TA = 25_C unless otherwise noted. b. For DESIGN AID ONLY, not subject to production testing. c. Pulse test: PW v300 ms duty cycle v2%. d. Switching time is essentially independent of operating temperature. VDD = 25 V V, RL = 1250 W ID ^ 20 mA, VGEN = -5 V RG = 25 W 20 20 10 10 VDDQ20 ns Turn-Off Time 2 Siliconix S-52426—Rev. C, 14-Apr-97 ND2012L/2020L Typical Characteristics (25_C Unless Otherwise Noted) 100 Output Characteristics (ND2012) 0V –0.5 V –1 V 100 Output Characteristics (ND2020) VGS = 2 V 80 I D – Drain Current (mA) 0.2 V 0V –0.2 V –0.4 V 80 I D – Drain Current (A) VGS = 5 V 60 –1.5 V 60 –0.6 V 40 –1.4 V 40 –0.8 V –1 V –1.2 V 20 –2 V –2.5 V 20 0 0 0.4 0.8 1.2 1.6 2 VDS – Drain-to-Source Voltage (V) 500 0 0 0.4 0.8 1.2 1.6 2 VDS – Drain-to-Source Voltage (V) Transfer Characteristics (ND2012) VDS = 10 V TC = –55_C 25_C 200 Transfer Characteristics (ND2020) VDS = 10 V 160 I D – Drain Current (mA) 400 I D – Drain Current (mA) 125_C 300 120 200 80 TC = 125_C 25_C –55_C 100 40 0 –4.5 –3.5 –2.5 –1.5 –0.5 0.5 0 –4.5 –3.5 –2.5 –1.5 –0.5 0.5 VGS – Gate-Source Voltage (V) VGS – Gate-Source Voltage (V) 25 On-Resistance and Drain Current vs. Gate-Source Cutoff Voltage rDS @ ID = 20 mA, VGS = 0 V IDSS @ VDS = 7.5 V, VGS = 0 V 1000 25 On-Resistance vs. DrainCurrent VGS = 0 V rDS(on) – On-Resistance ( W ) rDS(on) 15 IDSS 10 400 600 rDS(on) – On-Resistance ( W ) 20 800 20 I DSS – Drain Current (mA) 15 ND2020 10 ND2012 5 200 5 0 0 –1 –2 –3 –4 –5 VGS(off) – Gate-Source Cutoff Voltage (V) 0 0 10 100 ID – Drain Current (mA) 1K Siliconix S-52426—Rev. C, 14-Apr-97 3 ND2012L/2020L Typical Characteristics (25_C Unless Otherwise Noted) (Cont’d) Normalized On-Resistance vs. Junction Temperature 2.25 g fs – Forward Transconductance (mS) rDS(on) – Drain-Source On-Resistance (Normalized) 2.00 1.75 1.50 1.25 1.00 0.75 0.50 –50 –10 30 70 110 150 TJ – Junction Temperature (_C) VGS = 0 V ID = 20 mA Forward Transconductance and Output Conductance vs. Drain Current 350 300 250 200 150 100 50 0 1 10 100 ID – Drain Current (A) gfs gos VDS = 7.5 V Pulse Test 80 ms, 1% Duty Cycle 700 600 500 400 300 200 100 0 1K g os – Output Conductance (m S) Capacitance 120 100 C – Capacitance (pF) 80 60 40 20 0 0 C rss 1 10 20 30 40 50 1 C oss C iss VGS = –5 V f = 1 MHz t – Switching Time (ns) 100 Load Condition Effects on Switching td(on) VDD = 25 V VGS = 0 to –5 V RG = 25 W tf 10 td(off) tr 10 ID – Drain Current (.


NCV8508 ND2012L ND2020L


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)