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NDB410BE Datasheet, Equivalent, N-Channel MOSFET.N-Channel MOSFET N-Channel MOSFET |
| Part | NDB410BE |
|---|---|
| Description | N-Channel MOSFET |
| Feature | May 1994 NDP410A / NDP410AE / NDP410B / NDP410BE NDB410A / NDB410AE / NDB410B / NDB410BE N-Channel Enhancement Mode Field Effect Transistor General Description These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC. |
| Manufacture | Fairchild |
| Datasheet |
| Part | NDB410BE |
|---|---|
| Description | N-Channel MOSFET |
| Feature | May 1994 NDP410A / NDP410AE / NDP410B / NDP410BE NDB410A / NDB410AE / NDB410B / NDB410BE N-Channel Enhancement Mode Field Effect Transistor General Description These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC. |
| Manufacture | Fairchild |
| Datasheet |
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