Document
January 1996
NDP603AL / NDB603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features
25A, 30V. RDS(ON) = 0.022Ω @ VGS=10V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High density cell design for extremely low RDS(ON). 175°C maximum junction temperature rating.
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D
G
S
Absolute Maximum Ratings
Symbol VDSS VGSS ID Parameter Drain-Source Voltage
T C = 25°C unless otherwise noted
NDP603AL 30 ± 20 25
(Note 1)
NDB603AL
Units V V A
Gate-Source Voltage - Continuous Drain Current - Continuous - Pulsed
100 50 0.4 -65 to 175 275 W W/°C °C °C
PD
Total Power Dissipation @ TC = 25°C Derate above 25°C
TJ,TSTG TL
Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
THERMAL CHARACTERISTICS RθJC RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2.5 62.5 °C/W °C/W
© 1997 Fairchild Semiconductor Corporation
NDP603AL.SAM
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol Parameter Conditions Min Typ Max Units DRAIN-SOURCE AVALANCHE RATINGS (Note 2) W DSS IAR BVDSS IDSS IGSSF IGSSR VGS(th) Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current VDD = 15 V, ID = 25 A 100 25 mJ A
OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate - Body Leakage, Forward Gate - Body Leakage, Reverse VGS = 0 V, ID = 250 µA VDS = 24 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = 250 µA TJ = 125 C VDS = VGS, ID = 10 mA TJ = 125 C RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 25 A TJ = 125oC VGS = 4.5 V, ID = 10 A ID(on) gFS Ciss Coss Crss tD(on) tr tD(off) tf Qg Qgs Qgd IS VSD On-State Drain Current VGS = 10 V, VDS = 10 V VGS = 4.5 V, VDS = 10 V Forward Transconductance VDS = 10 V, ID = 25 A VDS = 15 V, VGS = 0 V, f = 1.0 MHz DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance 1100 540 175 pF pF pF 60 15 18 S
o o
30 10 100 -100
V µA nA nA
ON CHARACTERISTICS (Note 2) Gate Threshold Voltage 1.1 0.7 1.4 1 1.5 1.1 1.85 1.5 0.019 0.028 0.031 3 2.2 3 2.2 0.022 0.045 0.04 A V
Ω
SWITCHING CHARACTERISTICS (Note 2) Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 10 V, ID = 25 A, VGS = 10 V VDD = 15 V, ID = 25 A, VGS = 10 V, RGEN = 24 Ω 15 70 90 80 28 5 7 30 110 150 130 40 7 10 ns ns ns ns nC nC nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 25 A
(Note 2)
25 1.3
A V
Note: 1. Maximum DC current limited by the package. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
NDP603AL.SAM
Typical Electrical Characteristics
80 3
VGS =10V
ID , DRAIN-SOURCE CURRENT (A)
8.0
DRAIN-SOURCE ON-RESISTANCE
7.0 6.0
RDS(on) , NORMALIZED
2.5
VGS = 4V 4.5 5.0
60
5.0
40
2
6.0
1.5
4.5
20
7.0 8.0 10
4.0
1
3.0
0 0 1 2 3 V DS , DRAIN-SOURCE VOLTAGE (V) 4 5 0.5 0 20 40 I D , DRAIN CURRENT (A) 60 80
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Gate Voltage and Drain Current.
1.6
2.5
DRAIN-SOURCE ON-RESISTANCE
1.4
VGS =10V
R DS(on) , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I D = 25A
V GS = 10V
2
RDS(ON), NORMALIZED
1.2
T J = 125°C
1.5
1
25°C
1
0.8
-55°C
0.6 -50
0.5 -25 0 25 50 75 100 125 150 175 0 20 40 I D , DRAIN CURRENT (A) 60 80 TJ , JUNCTION TEMPERATURE (°C)
Figure 3. On-Resistance Variation with Temperature.
Figure 4. On-Resistance Variation with Drain Current and Temperature.
40
0.05
V DS = 1 0 V
I D , DRAIN CURRENT (A)
30
TJ = -55°C
25 125
I D , DRAIN CURRENT (A)
0.04
V DS = 1 0 V
TJ = 125°C
0.03
25°C
-55°C
20
0.02
10
0.01
0 1 2 3 4 5 V GS , GATE TO SOURCE VOLTAGE (V) 6
0 0.5
1 1.5 2 VGS , GATE TO SOURCE VOLTAGE (V)
2.5
Figure 5. Drain Current Variation with Gate Voltage and Temperature.
Figure 6. Sub-threshold Drain Current Variation with Gate Voltage and Temperature.
NDP603AL.SAM
Typical Electrical Characteristics (continued)
Vth, GATE-SOURCE THRESHOLD VOLTAGE (V)
2.2 1.12
DRAIN-SOURCE BREAKDOWN VOLTAGE
VDS = VGS
2 1.8 1.6 1.4 1.2 1 0.8 -50
ID = 250µA
1.08
I D = 10mA
BV DSS , NORMALIZED
1.04
1mA
1.