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NDB7050 Dataheets PDF



Part Number NDB7050
Manufacturers Fairchild
Logo Fairchild
Description N-Channel MOSFET
Datasheet NDB7050 DatasheetNDB7050 Datasheet (PDF)

March 1996 NDP7050 / NDB7050 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage a.

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March 1996 NDP7050 / NDB7050 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features 75A, 50V. RDS(ON) = 0.013Ω @ VGS=10V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications. _______________________________________________________________________________ D G S Absolute Maximum Ratings Symbol Parameter TC = 25°C unless otherwise noted NDP7050 NDB7050 Units VDSS VDGR VGSS ID Drain-Source Voltage Drain-Gate Voltage (RGS < 1 MΩ) Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 µs) Drain Current - Continuous - Pulsed 50 50 ± 20 ± 40 75 225 150 1 -65 to 175 275 V V V A PD Maximum Power Dissipation @ TC = 25°C Derate above 25°C W W/°C °C °C TJ,TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds © 1997 Fairchild Semiconductor Corporation NDP7050.SAM Rev. D Electrical Characteristics (T Symbol Parameter C = 25°C unless otherwise noted) Conditions Min Typ Max Units DRAIN-SOURCE AVALANCHE RATINGS (Note 1) WDSS IAR BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) ID(on) gFS Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VDD = 25 V, ID = 75 A 550 75 mJ A V OFF CHARACTERISTICS VGS = 0 V, ID = 250 µA VDS = 50 V, VGS = 0 V TJ = 125°C VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = 250 µA TJ = 125°C VGS = 10 V, ID = 40 A TJ = 125°C VGS = 10 V, VDS = 10 V VDS = 10 V, ID = 37.5 A VDS = 25 V, VGS = 0 V, f = 1.0 MHz 50 250 1 100 -100 µA mA nA nA Gate - Body Leakage, Forward Gate - Body Leakage, Reverse ON CHARACTERISTICS (Note 1) Gate Threshold Voltage 2 1.4 2.8 2.1 0.01 0.015 4 3.6 0.013 0.023 V Static Drain-Source On-Resistance Ω A On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance 75 15 39 2960 1130 380 3600 1600 800 S pF pF pF DYNAMIC CHARACTERISTICS Ciss Coss Crss tD(on) tr tD(off) tf Qg Qgs Qgd SWITCHING CHARACTERISTICS (Note 1) Turn - On Delay Time Turn - O.


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