Document
March 1996
NDP7050 / NDB7050 N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features
75A, 50V. RDS(ON) = 0.013Ω @ VGS=10V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
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D
G
S
Absolute Maximum Ratings
Symbol Parameter
TC = 25°C unless otherwise noted
NDP7050
NDB7050
Units
VDSS VDGR VGSS ID
Drain-Source Voltage Drain-Gate Voltage (RGS < 1 MΩ) Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 µs) Drain Current - Continuous - Pulsed
50 50 ± 20 ± 40 75 225 150 1 -65 to 175 275
V V V
A
PD
Maximum Power Dissipation @ TC = 25°C Derate above 25°C
W W/°C °C °C
TJ,TSTG TL
Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
© 1997 Fairchild Semiconductor Corporation
NDP7050.SAM Rev. D
Electrical Characteristics (T
Symbol Parameter
C
= 25°C unless otherwise noted)
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
WDSS IAR BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) ID(on) gFS
Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current
VDD = 25 V, ID = 75 A
550 75
mJ A V
OFF CHARACTERISTICS
VGS = 0 V, ID = 250 µA VDS = 50 V, VGS = 0 V TJ = 125°C VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = 250 µA TJ = 125°C VGS = 10 V, ID = 40 A TJ = 125°C VGS = 10 V, VDS = 10 V VDS = 10 V, ID = 37.5 A VDS = 25 V, VGS = 0 V, f = 1.0 MHz
50 250 1 100 -100
µA mA nA nA
Gate - Body Leakage, Forward Gate - Body Leakage, Reverse
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
2 1.4
2.8 2.1 0.01 0.015
4 3.6 0.013 0.023
V
Static Drain-Source On-Resistance
Ω
A
On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
75 15 39 2960 1130 380 3600 1600 800
S pF pF pF
DYNAMIC CHARACTERISTICS
Ciss Coss Crss
tD(on) tr tD(off) tf Qg Qgs Qgd
SWITCHING CHARACTERISTICS (Note 1)
Turn - On Delay Time Turn - O.