NDH8303N

May 1997 NDH8303N Dual N-Channel Enhancement Mode Field Effect Transistor General Description SuperSOTTM-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package. Features 3.8 A, 20 V. RDS(ON) = 0.035 Ω @ VGS = 4.5 V RDS(ON) = 0.045 Ω @ VGS = 2.7 V. Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. ____________________________________________________________________________________________ 5 6 7 8 4 3 2 1 Absolute Maximum Ratings T A = 25°C unless otherwise noted Symbol VDSS VGSS ID PD TJ,TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power Dissipation (Note 1) (Note 1) NDH8303N 20 ±8 3.8 15 0.8 -55 to 150 Units V V A W °C Operating and Storage Temperature Range THERMAL CHARACTERISTICS RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1) 156 40 °C/W °C/W (Note 1) © 1997 Fairchild...