NDH8321C

January 1999 NDH8321C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features N-Ch 3.8 A, 20 V, RDS(ON)=0.035 Ω @ VGS= 4.5 V RDS(ON)=0.045 Ω @ VGS=2.7 V P-Ch -2.7 A, -20V, RDS(ON)=0.07Ω @ VGS= -4.5 V RDS(ON)=0.095 Ω @ VGS= -2.7 V. Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. _______________________________________________________________________________ D2 D2 D1 D1 S2 S1 G1 G2 5 6 7 8 4 3 2 1 SuperSOT -8 Mark: .8321C TM Absolute Maximum Ratings Symbol Parameter TA= 25°C unless otherwise noted N-Channel P-Channel Units VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed (Note 1) 20 ±8 3.8 15 (Note 1) -20 ±8 -2.7 -10 0.8 -55 to 150 V V A PD TJ,TSTG Power Dissipation for Single Operation W °C Operati...