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NDH832P Dataheets PDF



Part Number NDH832P
Manufacturers Fairchild
Logo Fairchild
Description P-Channel MOSFET
Datasheet NDH832P DatasheetNDH832P Datasheet (PDF)

June 1996 NDH832P P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered .

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June 1996 NDH832P P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features -4.2A, -20V. RDS(ON) = 0.06Ω @ VGS = -4.5V RDS(ON) = 0.08Ω @ VGS = -2.7V. High density cell design for extremely low RDS(ON). Enhanced SuperSOTTM-8 small outline surface mount package with high power and current handling capability. ___________________________________________________________________________________________ 5 6 7 8 4 3 2 1 Absolute Maximum Ratings Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed PD T A = 25°C unless otherwise noted NDH832P -20 -8 (Note 1a) Units V V A -4.2 -15 Maximum Power Dissipation (Note 1a) (Note 1b) (Note 1c) 1.8 1 0.9 -55 to 150 W TJ,TSTG Operating and Storage Temperature Range °C THERMAL CHARACTERISTICS RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 70 20 °C/W °C/W NDH832P Rev. B2 Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, ID = -250 µA VDS = -16 V, VGS = 0 V TJ = 55oC Gate - Body Leakage, Forward Gate - Body Leakage, Reverse VGS = 8 V, VDS = 0 V VGS = -8 V, VDS= 0 V VDS = VGS, ID = -250 µA TJ = 125oC Static Drain-Source On-Resistance VGS = -4.5 V, ID = -4.2 A TJ = 125oC VGS = -2.7 V, ID = -3.7 A ID(on) gFS Ciss Coss Crss tD(on) tr tD(off) tf Qg Qgs Qgd On-State Drain Current VGS = -4.5 V, VDS = -5 V VGS = -2.7 V, VDS = -5 V Forward Transconductance VDS = -10 V, ID = -4.2 A VDS = -10 V, VGS = 0 V, f = 1.0 MHz DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance 1000 530 180 pF pF pF -15 -5 9 S -0.4 -0.3 -0.7 -0.5 0.045 0.063 0.064 -20 -1 -10 100 -100 V µA µA nA nA ON CHARACTERISTICS (Note 2) Gate Threshold Voltage -1 -0.8 0.06 0.12 0.08 A V Ω SWITCHING CHARACTERISTICS (Note 2) Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = -10 V, ID = -4.2 A, VGS = -4.5 V VDD = -5 V, ID = -1 A, VGEN = -4.5 V, RGEN = 6 Ω 13 53 60 33 18 1.2 6 20 70 80 40 30 ns ns ns ns nC nC nC NDH832P Rev. B2 Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max -1.5 (Note 2) Units A V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS VSD Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = -1.5 A -0.75 -1.2 PD (t ) = R θJA(t ) T J−TA = R θJC+RθC A(t ) T J−TA = I2 D (t ) × RDS(ON ) TJ Typical RθJA using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment: a. 70oC/W when mounted on a 1 in2 pad of 2oz cpper. b. 125oC/W when mounted on a 0.026 in2 pad of 2oz copper. c. 135oC/W when mounted on a 0.005 in2 pad of 2oz copper. 1a 1b 1c Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. NDH832P Rev. B2 Typical Electrical Characteristics -20 2 V I D , DRAIN-SOURCE CURRENT (A) GS = -4.5V -3.5 -3.0 -2.7 -2.5 R DS(on) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.8 -15 1.6 V GS = -2.5V -2.7 -10 1.4 -3.0 -3.5 -4.0 -4.5 -2.0 -5 1.2 -1.5 0 0 -1 V DS 1 -5.0 -2 -3 , DRAIN-SOURCE VOLTAGE (V) -4 0.8 0 -4 -8 -12 I D , DRAIN CURRENT (A) -16 -20 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Gate Voltage and Drain Current. 1.6 2 V G S = -4.5V 1.4 R DS(ON), NORMALIZED V GS = -4.5V R DS(on), NORMALIZED 1.2 DRAIN-SOURCE ON-RESISTANCE DRAIN-SOURCE ON-RESISTANCE I D = -4.2A T J = 125°C 1.5 1 25°C 1 0.8 -55°C 0.6 -50 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (°C) 125 150 0.5 0 -4 I D -8 -12 , DRAIN CURRENT (A) -16 -20 Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Drain Current and Temperature. -20 1.2 125°C V th , NORMALIZED GATE-SOURCE THRESHOLD VOLTAGE V DS = -10V -16 I D, DRAIN CURRENT (A) T = -55°C J 25°C 1.1 VDS = V GS I D = -250µA 1 -12 0.9 -8 0.8 -4 0.7 0 0 -0.5 -1 -1.5 -2 -2.5 -3 .


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