May 1997
NDH853N N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mod...
May 1997
NDH853N N-Channel Enhancement Mode Field Effect
Transistor
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as battery powered circuits or portable electronics where fast switching, low in-line power loss, and resistance to transients are needed.
Features
7.6 A, 30 V. RDS(ON) = 0.017 Ω @ VGS = 10 V RDS(ON) = 0.025 Ω @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). Proprietary SuperSOTTM-8 small outline surface mount package with high power and current handling capability.
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5 6 7 8
4 3 2 1
Absolute Maximum Ratings T A = 25°C unless otherwise noted
Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power Dissipation
(Note 1a) (Note 1b) (Note 1c) (Note 1a)
NDH853N 30 ±20 7.6 23 1.8 1 0.9 -55 to 150
Units V V A
W
TJ,TSTG
Operating and Storage Temperature Range
°C
THERMAL CHARACTERISTICS RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
70 20
°C/W °C/W
© 1997 Fairchild Semiconductor Corporation
NDH853N Rev. C
ELECTR...