Document
May 1994
NDP408A / NDP408AE / NDP408B / NDP408BE NDB408A / NDB408AE / NDB408B / NDB408BE N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features
12 and 11A, 80V. RDS(ON) = 0.16 and 0.20Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million/in²) for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
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D
G
S
Absolute Maximum Ratings
Symbol Parameter VDSS VDGR VGSS ID PD TJ,TSTG TL Drain-Source Voltage Drain-Gate Voltage (RGS < 1 MΩ) Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 µs) Drain Current - Continuous - Pulsed Total Power Dissipation @ TC = 25°C Derate above 25°C
TC = 25°C unless otherwise noted
NDP408A NDP408AE NDB408A NDB408AE 80 80 ±20 ±40 12 36 50 0.33
NDP408B NDP408BE NDB408B NDB408BE
Units V V V V
11 33
A A W W/°C °C °C
Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
-65 to 175 275
© 1997 Fairchild Semiconductor Corporation
NDP408.SAM
Electrical Characteristics (T
Symbol EAS IAR Parameter Single Pulse Drain-Source Avalanche Energy
C
= 25°C unless otherwise noted)
Conditions VDD = 25 V, ID = 12 A
Type NDP408AE NDP408BE NDB408AE NDB408BE
Min
Typ
Max 40 12
Units mJ A
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
Maximum Drain-Source Avalanche Current
OFF CHARACTERISTICS BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate - Body Leakage, Forward Gate - Body Leakage, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance VGS = 0 V, ID = 250 µA VDS = 80 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = 250 µA VGS = 10 V, ID = 6 A ALL ALL TJ = 125°C ALL ALL ALL TJ = 125°C NDP408A NDP408AE NDB408A TJ = 125°C NDB408AE NDP408B NDP408BE NDB408B TJ = 125°C NDB408BE NDP408A NDP408AE NDB408A NDB408AE NDP408B NDP408BE NDB408B NDB408BE gFS Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 10 V, ID = 6 A VDS = 25 V, VGS = 0 V, f = 1.0 MHz ALL ALL ALL ALL DYNAMIC CHARACTERISTICS 11 2 1.4 2.9 2.3 0.11 0.19 80 250 1 100 -100 4 3.6 0.16 0.32 0.2 0.5 V µA mA nA nA V V Ω Ω Ω Ω A
ON CHARACTERISTICS (Note 2)
VGS = 10 V, ID = 5.5 A
ID(on)
On-State Drain Current
VGS = 10 V, VDS = 10 V
10
A
3
5.3 380 115 35 500 125 50
S pF pF pF
Ciss Coss Crss
NDP408.SAM
Electrical Characteristics (T
Symbol tD(ON) tr tD(OFF) tf Qg Qgs Qgd IS Parameter Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
C
= 25°C unless otherwise noted)
Conditions VDD = 40 V, ID = 12 A, VGS = 10 V, RGEN = 24 Ω
Type ALL ALL ALL ALL
Min
Typ 7.5 48 22 32 12 2.5 6
Max 20 80 40 60 17
Units nS nS nS nS nC nC nC
SWITCHING CHARACTERISTICS (Note 2)
VDS = 64 V, ID = 12 A, VGS = 10V
ALL ALL ALL NDP408A NDP408AE NDB408A NDB408AE NDP408B NDP408BE NDB408B NDB408BE
DRAIN-SOURCE DIODE CHARACTERISTICS Maximum Continuos Drain-Source Diode Forward Current 12 A
11
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
NDP408A NDP408AE NDB408A NDB408AE NDP408B NDP408BE NDB408B NDB408BE
36
A
33
A
VSD
(Note 2)
Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Current
VGS = 0 V, IS = 6 A VGS = 0 V, IS = 12 A, dIS/dt = 100 A/µs
ALL TJ = 125°C ALL ALL
0.87 0.74 68 4.7
1.3 1.2 100 7
V V ns A
trr Irr RθJC RθJA
THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient ALL ALL 3 62.5 °C/W °C/W
Notes: 1. NDP408A/408B and NDB408A/408B are not rated for operation in avalanche mode. 2. Pulse Test: Pulse Width < 300 µ s, Duty Cycle < 2.0%.
NDP408.SAM
Typical Electrical Characteristics
30 2
V GS = 20V
I D , DRAIN-SOURCE CURRENT (A) 25
12 8.0
R DS(on) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE
10
V GS = 6V
1.8 1.6 1.4 1.2 1 0.8 0.6
7.0 8.0 10 12 20
20
7.0
15
10
6.0
5
5.0
0
0
2
4
6
8
0
5
VDS , DRAIN-SOURCE VOLTAGE (V)
10 15 20 I D , DRAIN CURRENT (A)
25
30
Figure 1. On-Region Characteristics.
Figure 2. On-Re.