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NDP408BE Dataheets PDF



Part Number NDP408BE
Manufacturers Fairchild
Logo Fairchild
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet NDP408BE DatasheetNDP408BE Datasheet (PDF)

May 1994 NDP408A / NDP408AE / NDP408B / NDP408BE NDB408A / NDB408AE / NDB408B / NDB408BE N-Channel Enhancement Mode Field Effect Transistor General Description These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutat.

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May 1994 NDP408A / NDP408AE / NDP408B / NDP408BE NDB408A / NDB408AE / NDB408B / NDB408BE N-Channel Enhancement Mode Field Effect Transistor General Description These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features 12 and 11A, 80V. RDS(ON) = 0.16 and 0.20Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million/in²) for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications. _____________________________________________________________________ D G S Absolute Maximum Ratings Symbol Parameter VDSS VDGR VGSS ID PD TJ,TSTG TL Drain-Source Voltage Drain-Gate Voltage (RGS < 1 MΩ) Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 µs) Drain Current - Continuous - Pulsed Total Power Dissipation @ TC = 25°C Derate above 25°C TC = 25°C unless otherwise noted NDP408A NDP408AE NDB408A NDB408AE 80 80 ±20 ±40 12 36 50 0.33 NDP408B NDP408BE NDB408B NDB408BE Units V V V V 11 33 A A W W/°C °C °C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds -65 to 175 275 © 1997 Fairchild Semiconductor Corporation NDP408.SAM Electrical Characteristics (T Symbol EAS IAR Parameter Single Pulse Drain-Source Avalanche Energy C = 25°C unless otherwise noted) Conditions VDD = 25 V, ID = 12 A Type NDP408AE NDP408BE NDB408AE NDB408BE Min Typ Max 40 12 Units mJ A DRAIN-SOURCE AVALANCHE RATINGS (Note 1) Maximum Drain-Source Avalanche Current OFF CHARACTERISTICS BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate - Body Leakage, Forward Gate - Body Leakage, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance VGS = 0 V, ID = 250 µA VDS = 80 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = 250 µA VGS = 10 V, ID = 6 A ALL ALL TJ = 125°C ALL ALL ALL TJ = 125°C NDP408A NDP408AE NDB408A TJ = 125°C NDB408AE NDP408B NDP408BE NDB408B TJ = 125°C NDB408BE NDP408A NDP408AE NDB408A NDB408AE NDP408B NDP408BE NDB408B NDB408BE gFS Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 10 V, ID = 6 A VDS = 25 V, VGS = 0 V, f = 1.0 MHz ALL ALL ALL ALL DYNAMIC CHARACTERISTICS 11 2 1.4 2.9 2.3 0.11 0.19 80 250 1 100 -100 4 3.6 0.16 0.32 0.2 0.5 V µA mA nA nA V V Ω Ω Ω Ω A ON CHARACTERISTICS (Note 2) VGS = 10 V, ID = 5.5 A ID(on) On-State Drain Current VGS = 10 V, VDS = 10 V 10 A 3 5.3 380 115 35 500 125 50 S pF pF pF Ciss Coss Crss NDP408.SAM Electrical Characteristics (T Symbol tD(ON) tr tD(OFF) tf Qg Qgs Qgd IS Parameter Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge C = 25°C unless otherwise noted) Conditions VDD = 40 V, ID = 12 A, VGS = 10 V, RGEN = 24 Ω Type ALL ALL ALL ALL Min Typ 7.5 48 22 32 12 2.5 6 Max 20 80 40 60 17 Units nS nS nS nS nC nC nC SWITCHING CHARACTERISTICS (Note 2) VDS = 64 V, ID = 12 A, VGS = 10V ALL ALL ALL NDP408A NDP408AE NDB408A NDB408AE NDP408B NDP408BE NDB408B NDB408BE DRAIN-SOURCE DIODE CHARACTERISTICS Maximum Continuos Drain-Source Diode Forward Current 12 A 11 A ISM Maximum Pulsed Drain-Source Diode Forward Current NDP408A NDP408AE NDB408A NDB408AE NDP408B NDP408BE NDB408B NDB408BE 36 A 33 A VSD (Note 2) Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Current VGS = 0 V, IS = 6 A VGS = 0 V, IS = 12 A, dIS/dt = 100 A/µs ALL TJ = 125°C ALL ALL 0.87 0.74 68 4.7 1.3 1.2 100 7 V V ns A trr Irr RθJC RθJA THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient ALL ALL 3 62.5 °C/W °C/W Notes: 1. NDP408A/408B and NDB408A/408B are not rated for operation in avalanche mode. 2. Pulse Test: Pulse Width < 300 µ s, Duty Cycle < 2.0%. NDP408.SAM Typical Electrical Characteristics 30 2 V GS = 20V I D , DRAIN-SOURCE CURRENT (A) 25 12 8.0 R DS(on) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 10 V GS = 6V 1.8 1.6 1.4 1.2 1 0.8 0.6 7.0 8.0 10 12 20 20 7.0 15 10 6.0 5 5.0 0 0 2 4 6 8 0 5 VDS , DRAIN-SOURCE VOLTAGE (V) 10 15 20 I D , DRAIN CURRENT (A) 25 30 Figure 1. On-Region Characteristics. Figure 2. On-Re.


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