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NDP610A Datasheet, Equivalent, Effect Transistor.N-Channel Enhancement Mode Field Effect Transistor N-Channel Enhancement Mode Field Effect Transistor |
Part | NDP610A |
---|---|
Description | N-Channel Enhancement Mode Field Effect Transistor |
Feature | May 1994 NDP610A / NDP610AE / NDP610B / NDP610BE NDB610A / NDB610AE / NDB610B / NDB610BE N-Channel Enhancement Mode Field Effect Transistor General Description These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC. |
Manufacture | Fairchild |
Datasheet |
Part | NDP610A |
---|---|
Description | N-Channel Enhancement Mode Field Effect Transistor |
Feature | May 1994 NDP610A / NDP610AE / NDP610B / NDP610BE NDB610A / NDB610AE / NDB610B / NDB610BE N-Channel Enhancement Mode Field Effect Transistor General Description These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC. |
Manufacture | Fairchild |
Datasheet |
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