March 1996
NDS351N N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These N-Channel ...
March 1996
NDS351N N-Channel Logic Level Enhancement Mode Field Effect
Transistor
General Description
These N-Channel logic level enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
Features
1.1A, 30V. RDS(ON) = 0.25Ω @ VGS = 4.5V. Proprietary package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. Compact industry standard SOT-23 surface mount package.
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G
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Absolute Maximum Ratings
Symbol VDSS VGSS ID PD TJ,TSTG Parameter Drain-Source Voltage
T A = 25°C unless otherwise noted
NDS351N 30 20
(Note 1a)
Units V V A
Gate-Source Voltage - Continuous Maximum Drain Current - Continuous - Pulsed Maximum Power Dissipation
(Note 1a) (Note 1b)
± 1.1 ± 10 0.5 0.46 -55 to 150
W
Operating and Storage Temperature Range
°C
THERMAL CHARACTERISTICS RθJA RθJC Thermal Resistance, Junction-to-Ambient
(Note 1a)
250
(Note 1)
°C/W °C/W
Th...