NDS8426A

January 1998 NDS8426A Single N-Channel Enhancement Mode Field Effect Transistor General Description SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features 10.5 A, 20 V. RDS(ON) = 0.0135 Ω @ VGS= 4.5 V. RDS(ON) = 0.016 Ω @ VGS= 2.7 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. ___________________________________________________________________________________________ 5 6 7 8 4 3 2 1 ABSOLUTE MAXIMUM RATINGS T A = 25°C unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power Dissipation (Note 1a) (Note 1b) (Note 1c) (Note 1a) NDS8426A 20 ±8 10.5 30 2.5 1.2 1 -55 to 150 Units V V A W TJ,TSTG RθJA RθJC Operating and Storage Temperature Range °C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 50 25 °C/W °C/W © 1998 Fairchild Semiconductor Corporation NDS8426A Rev.B1...