NDS8852H

February 1996 NDS8852H Complementary MOSFET Half Bridge General Description These Complementary MOSFET half bridge devices are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage half bridge applications or CMOS applications when both gates are connected together. Features N-Channel 4.3A, 30V, RDS(ON)=0.08Ω @ VGS=10V. P-Channel -3.4A, -30V, RDS(ON)=0.13Ω @ VGS=-10V. High density cell design or extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Matched pair for equal input capacitance and power capability . ________________________________________________________________________________ V+ P-Gate Vout Vout Vout N -Gate Vout V- Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power Dissipation (Single Device) TJ,TSTG T A= 25°C unless otherwise noted N-Channel 30 20 (Note 1a & 2) P-Channel -30 -20 -3.4 -10 2.5 1.2 1 -55 to 150 Units V V A 4.3 15 (Note 1a) (Note 1b) (Note 1c) W Operating and Storage Temperature Range °C THERMAL CHARACTERISTICS RθJA RθJC Thermal Resistance, Junction-to-Ambient (Single Device) Thermal Resistance, Junction-to-C...