NDS9410A

NDS9410A April 2000 NDS9410A Single N-Channel Enhancement Mode Field Effect Transistor General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss and resistance to transients are needed. Features 7.3 A, 30 V. RDS(ON) = 28 mΩ @ VGS = 10 V RDS(ON) = 42 mΩ @ VGS = 4.5 V High performance trench technology for extremely low RDS(ON) High power and current handling capability in a widely used surface mount package. D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25 C unless otherwise noted o Parameter Ratings 30 ±20 (Note 1a) Units V V A W 7.3 20 2.5 1.2 1.0 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 50 25 °C/W °C/W Package Marking and Ordering Information Device Marking NDS9410A Device NDS9410A Reel Size 13’’ Tape width 12mm Quantity 2500...