30V P-Channel PowerTrench MOSFET
NDS9430
May 2002
NDS9430
30V P-Channel PowerTrench MOSFET
General Description
This P-Channel MOSFET is a rugged gate ...
Description
NDS9430
May 2002
NDS9430
30V P-Channel PowerTrench MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V – 20V).
Features
–5.3 A, –30 V RDS(ON) = 60 mΩ @ VGS = –10 V RDS(ON) =100 mΩ @ VGS = –4.5 V
Low gate charge Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability
Applications
Power management Load switch Battery protection
D D D D SO-8
DD D D
5 6 7
4 3 2 1
Pin 1 SO-8
G G S S S S S S
TA=25oC unless otherwise noted
8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed
Parameter
Ratings
–30 ±20
(Note 1a)
Units
V V A W
–5.3 –20 2.5 1.2 1 –55 to +175
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RθJA RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1c) (Note 1)
50 125 25
°C/W
Package Marking and Ordering Information
Device Marking NDS9430
2002 Fairchild Semiconductor Corporation
Device NDS9430
Reel Size 13’’
Tape width 12mm
Quantity 2500 units
NDS9430 Rev B
NDS9430
Electrical Characteristics
Symbol...
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