Document
NDS9933A
January 1999
NDS9933A
Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
This P-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage apllications such as DC motor control and DC/ DC conversion where fast switching,low in-line power loss, and resistance to transients are needed.
Features •
-2.8 A, -20 V. RDS(on) = 0.14 Ω @ VGS = -4.5 V RDS(on) = 0.19 Ω @ VGS = -2.7 V RDS(on) = 0.20 Ω @ VGS = -2.5 V.
• High density cell design for extremely low RDS(on). • High power and current handling capability in a
widely used surface mount package.
• Dual MOSFET in surface mount package.
D2 D1 D1
D2
5 6 4 3 2 1
G1 SO-8 S1 G1 S2
7 8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
TA = 25°C unless otherwise noted
Parameter
NDS9933A
-20
(Note 1a)
Units
V V A W
±8 -2.8 -10 2
Power Dissipation for Dual Operation Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
1.6 1 0.9 -55 to +150 °C
TJ, Tstg
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
78 40
°C/W °C/W
Package Outlines and Ordering Information
Device Marking
NDS9933A
©1999 Fairchild Semiconductor Corporation
Device
NDS9933A
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
NDS9933A Rev. A
NDS9933A
Electrical Characteristics
Symbol
BVDSS BVDSS ∆TJ IDSS IGSSF IGSSR
TA = 25°C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
(Note 2)
Test Conditions
VGS = 0 V, ID = -250 µA ID = -250 µA, Referenced to 25°C VDS = -16 V, VGS = 0 V VGS = 8 V, VDS = 0 V VGS = -8 V, VDS = 0 V
Min Typ Max Units
-20 -25 -1 100 -100 V mV/°C µA nA nA
Off Characteristics
On Characteristics
VGS(th) ∆VGS(th) ∆TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance
VDS = VGS, ID = -250 µA ID = -250 µA, Referenced to 25°C VGS = -4.5 V, ID = -2.8 A VGS = -4.5 V, ID = -2.8A,TJ=125°C VGS = -2.7 V, ID = -1.5 A VGS = -2.5 V, ID = -1.5 A
-0.4
-0.65 4 0.10 5 0.15 0 0.13 5 0.14 0
-1
V mV/°C
0.140 0.240 0.190 0.200
Ω
ID(on) gFS
On-State Drain Current Forward Transconductance
VGS = -4.5 V, VDS = -5 V VDS = -5 V, ID = -2.8 A
-10 6.5
A S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = -10 V, VGS = 0 V, f = 1.0 MHz
405 170 45
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay.