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NDS9933A Dataheets PDF



Part Number NDS9933A
Manufacturers Fairchild
Logo Fairchild
Description Dual P-Channel MOSFET
Datasheet NDS9933A DatasheetNDS9933A Datasheet (PDF)

NDS9933A January 1999 NDS9933A Dual P-Channel Enhancement Mode Field Effect Transistor General Description This P-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage apllications such as DC motor control and DC/ DC conversion where .

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NDS9933A January 1999 NDS9933A Dual P-Channel Enhancement Mode Field Effect Transistor General Description This P-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage apllications such as DC motor control and DC/ DC conversion where fast switching,low in-line power loss, and resistance to transients are needed. Features • -2.8 A, -20 V. RDS(on) = 0.14 Ω @ VGS = -4.5 V RDS(on) = 0.19 Ω @ VGS = -2.7 V RDS(on) = 0.20 Ω @ VGS = -2.5 V. • High density cell design for extremely low RDS(on). • High power and current handling capability in a widely used surface mount package. • Dual MOSFET in surface mount package. D2 D1 D1 D2 5 6 4 3 2 1 G1 SO-8 S1 G1 S2 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA = 25°C unless otherwise noted Parameter NDS9933A -20 (Note 1a) Units V V A W ±8 -2.8 -10 2 Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) 1.6 1 0.9 -55 to +150 °C TJ, Tstg Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 40 °C/W °C/W Package Outlines and Ordering Information Device Marking NDS9933A ©1999 Fairchild Semiconductor Corporation Device NDS9933A Reel Size 13’’ Tape Width 12mm Quantity 2500 units NDS9933A Rev. A NDS9933A Electrical Characteristics Symbol BVDSS BVDSS ∆TJ IDSS IGSSF IGSSR TA = 25°C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse (Note 2) Test Conditions VGS = 0 V, ID = -250 µA ID = -250 µA, Referenced to 25°C VDS = -16 V, VGS = 0 V VGS = 8 V, VDS = 0 V VGS = -8 V, VDS = 0 V Min Typ Max Units -20 -25 -1 100 -100 V mV/°C µA nA nA Off Characteristics On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance VDS = VGS, ID = -250 µA ID = -250 µA, Referenced to 25°C VGS = -4.5 V, ID = -2.8 A VGS = -4.5 V, ID = -2.8A,TJ=125°C VGS = -2.7 V, ID = -1.5 A VGS = -2.5 V, ID = -1.5 A -0.4 -0.65 4 0.10 5 0.15 0 0.13 5 0.14 0 -1 V mV/°C 0.140 0.240 0.190 0.200 Ω ID(on) gFS On-State Drain Current Forward Transconductance VGS = -4.5 V, VDS = -5 V VDS = -5 V, ID = -2.8 A -10 6.5 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = -10 V, VGS = 0 V, f = 1.0 MHz 405 170 45 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay.


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