NDS9958

February 1996 NDS9958 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as notebook computer power management, Half bridge motor control, cellular phone, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features N-Channel 3.5A, 20V, RDS(ON) = 0.1Ω @ VGS = 10V. P-Channel -3.5A , -20V, RDS(ON) = 0.1Ω @ VGS = -10V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual (N & P-Channel) MOSFET in surface mount package. _______________________________________________________________________________ 5 4 3 2 1 6 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage T A = 25°C unless otherwise noted N-Channel 20 ± 20 (Note 1a) (Note 1a) P-Channel -20 ± 20 ± 3.5 ± 2.8 ± 14 2 Units V V A Drain Current - Continuous TA = 25°C - Continuous TA = 70°C - Pulsed TA = 25°C ± 3.5 ± 2.8 ± 14 PD Power Dissipation for Dual Operation P...