September 1996
NDT014 N-Channel Enhancement Mode Field Effect Transistor
General Description
Power SOT N-Channel enhanc...
September 1996
NDT014 N-Channel Enhancement Mode Field Effect
Transistor
General Description
Power SOT N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.
Features
2.7A, 60V. RDS(ON) = 0.2Ω @ VGS = 10V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package.
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D
D
G
D
S
G
S
Absolute Maximum Ratings
Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power Dissipation
T A = 25°C unless otherwise noted
NDT014 60 ±20
(Note 1a)
Units V V A
±2.7 ±10
(Note 1a) (Note 1b) (Note 1c)
3 1.3 1.1 -65 to 150
W
TJ,TSTG
Operating and Storage Temperature Range
°C
THERMAL CHARACTERISTICS RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
42 12
°C/W °C/W
* Order option J23Z for cropped center drain lead.
© 1997 Fairchild Semiconductor Corporation
NDT014 Rev. C1
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