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NDT2955 Datasheet, Equivalent, P-Channel MOSFET.

P-Channel MOSFET

P-Channel MOSFET

 

 

 

Part NDT2955
Description P-Channel MOSFET
Feature September 1996 NDT2955 P-Channel Enhanc ement Mode Field Effect Transistor Gene ral Description Power SOT P-Channel enh ancement mode power field effect transi stors are produced using Fairchild's pr oprietary, high cell density, DMOS tech nology.
This very high density process is especially tailored to minimize on-s tate resistance and provide superior sw itching performance.
These devices are particularly suited for low voltage app lications such as notebook computer pow er management and DC motor control.
Fe atures -2.
5A, -60V.
RDS(ON) = 0.
3Ω @ VGS = -10V.
High density cell design fo r extremely low .
Manufacture Fairchild
Datasheet
Download NDT2955 Datasheet
Part NDT2955
Description P-Channel MOSFET
Feature September 1996 NDT2955 P-Channel Enhanc ement Mode Field Effect Transistor Gene ral Description Power SOT P-Channel enh ancement mode power field effect transi stors are produced using Fairchild's pr oprietary, high cell density, DMOS tech nology.
This very high density process is especially tailored to minimize on-s tate resistance and provide superior sw itching performance.
These devices are particularly suited for low voltage app lications such as notebook computer pow er management and DC motor control.
Fe atures -2.
5A, -60V.
RDS(ON) = 0.
3Ω @ VGS = -10V.
High density cell design fo r extremely low .
Manufacture Fairchild
Datasheet
Download NDT2955 Datasheet

NDT2955

NDT2955
NDT2955

NDT2955

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